是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOIC |
包装说明: | SOIC-8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | Factory Lead Time: | 6 weeks |
风险等级: | 5.11 | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | VOLTAGE-FEEDBACK | 最大平均偏置电流 (IIB): | 0.00006 µA |
最小共模抑制比: | 72 dB | 标称共模抑制比: | 90 dB |
频率补偿: | YES | 最大输入失调电流 (IIO): | 0.001 µA |
最大输入失调电压: | 3000 µV | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e4 | 长度: | 4.9 mm |
低-偏置: | YES | 低-失调: | NO |
微功率: | YES | 湿度敏感等级: | 1 |
负供电电压上限: | -19 V | 标称负供电电压 (Vsup): | -5 V |
功能数量: | 1 | 端子数量: | 8 |
最高工作温度: | 70 °C | 最低工作温度: | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOP |
封装等效代码: | SOP8,.25 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 包装方法: | TR |
峰值回流温度(摄氏度): | 260 | 功率: | NO |
电源: | +-3.5/+-18/7/36 V | 可编程功率: | NO |
认证状态: | Not Qualified | 座面最大高度: | 1.75 mm |
最小摆率: | 2.1 V/us | 标称压摆率: | 3.4 V/us |
子类别: | Operational Amplifier | 最大压摆率: | 0.35 mA |
供电电压上限: | 19 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | BIFET |
温度等级: | COMMERCIAL | 端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
标称均一增益带宽: | 2000 kHz | 最小电压增益: | 10000 |
宽带: | NO | 宽度: | 3.91 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
TLE2061CD | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS |
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