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TLC271CDG4

更新时间： 2024-10-31 04:28:11
品牌 Logo 应用领域
德州仪器 - TI 运算放大器
页数 文件大小 规格书
82页 1356K
描述
LinCMOSE PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS

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TLC271CDG4 数据手册

 浏览型号TLC271CDG4的Datasheet PDF文件第2页浏览型号TLC271CDG4的Datasheet PDF文件第3页浏览型号TLC271CDG4的Datasheet PDF文件第4页浏览型号TLC271CDG4的Datasheet PDF文件第5页浏览型号TLC271CDG4的Datasheet PDF文件第6页浏览型号TLC271CDG4的Datasheet PDF文件第7页 
TLC271, TLC271A, TLC271B  
LinCMOS PROGRAMMABLE LOW-POWER  
OPERATIONAL AMPLIFIERS  
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001  
D, JG, OR P PACKAGE  
(TOP VIEW)  
Input Offset Voltage Drift . . . Typically  
0.1 µV/Month, Including the First 30 Days  
Wide Range of Supply Voltages Over  
Specified Temperature Range:  
0°C to 70°C . . . 3 V to 16 V  
OFFSET N1  
IN –  
BIAS SELECT  
1
2
3
4
8
7
6
5
V
DD  
IN +  
GND  
OUT  
OFFSET N2  
–40°C to 85°C . . . 4 V to 16 V  
–55°C to 125°C . . . 5 V to 16 V  
Single-Supply Operation  
FK PACKAGE  
(TOP VIEW)  
Common-Mode Input Voltage Range  
Extends Below the Negative Rail (C-Suffix  
and I-Suffix Types)  
Low Noise . . . 25 nV/√Hz Typically at  
f = 1 kHz (High-Bias Mode)  
Output Voltage Range Includes Negative  
Rail  
3
2
1
20 19  
18  
NC  
NC  
IN –  
NC  
4
5
6
7
8
12  
High Input Impedance . . . 10 Ω Typ  
V
17  
DD  
ESD-Protection Circuitry  
NC  
16  
15  
14  
Small-Outline Package Option Also  
Available in Tape and Reel  
OUT  
NC  
IN +  
NC  
9 10 11 12 13  
Designed-In Latch-Up Immunity  
description  
The TLC271 operational amplifier combines a  
wide range of input offset voltage grades with low  
offset voltage drift and high input impedance. In  
addition, the TLC271 offers a bias-select mode  
NC – No internal connection  
that allows the user to select the best combination of power dissipation and ac performance for a particular  
application. These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offset  
voltage stability far exceeding the stability available with conventional metal-gate processes.  
AVAILABLE OPTIONS  
PACKAGE  
V
max  
IO  
T
A
SMALL OUTLINE  
(D)  
CHIP CARRIER  
(FK)  
CERAMIC DIP  
(JG)  
PLASTIC DIP  
(P)  
AT 25°C  
2 mV  
5 mV  
10 mV  
TLC271BCD  
TLC271ACD  
TLC271CD  
TLC271BCP  
TLC271ACP  
TLC271CP  
0°C to 70°C  
—
—
2 mV  
5 mV  
10 mV  
TLC271BID  
TLC271AID  
TLC271ID  
TLC271BIP  
TLC271AIP  
TLC271IP  
–40°C to 85°C  
–55°C to 125°C  
—
—
10 mV  
TLC271MD  
TLC271MFK  
TLC271MJG  
TLC271MP  
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC271BCDR).  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
LinCMOS is a trademark of Texas Instruments.  
Copyright 2001, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...82

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TLC271CDG4 替代型号

型号 品牌 替代类型 描述 数据表
TLC272IDR TI

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 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
TLC271CDR TI

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 LinCMOSE PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS
TLC271CD TI

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 LinCMOSE PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS

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