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TLC254BCDG4 PDF预览

TLC254BCDG4

更新时间： 2024-11-06 19:57:59
品牌 Logo 应用领域
德州仪器 - TI 放大器光电二极管
页数 文件大小 规格书
26页 498K
描述
LinCMOS™ Quad Operational Amplifier 14-SOIC 0 to 70

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中文翻译

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TLC254BCDG4 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：SOIC包装说明：SOIC-14
针数：14Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.33.00.01
风险等级：5.63放大器类型：OPERATIONAL AMPLIFIER
架构：VOLTAGE-FEEDBACK最大平均偏置电流 (IIB)：0.00006 µA
25C 时的最大偏置电流 (IIB)：0.00006 µA标称共模抑制比：80 dB
频率补偿：YES最大输入失调电压：3000 µV
JESD-30 代码：R-PDSO-G14JESD-609代码：e4
长度：8.65 mm低-偏置：YES
低-失调：NO湿度敏感等级：1
功能数量：4端子数量：14
最高工作温度：70 °C最低工作温度：
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP14,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE包装方法：TUBE
峰值回流温度（摄氏度）：260电源：1.4/16 V
认证状态：Not Qualified座面最大高度：1.75 mm
标称压摆率：3.6 V/us子类别：Operational Amplifier
最大压摆率：8.8 mA供电电压上限：18 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED标称均一增益带宽：1700 kHz
最小电压增益：4000宽度：3.9 mm
Base Number Matches：1

TLC254BCDG4 数据手册

 浏览型号TLC254BCDG4的Datasheet PDF文件第2页浏览型号TLC254BCDG4的Datasheet PDF文件第3页浏览型号TLC254BCDG4的Datasheet PDF文件第4页浏览型号TLC254BCDG4的Datasheet PDF文件第5页浏览型号TLC254BCDG4的Datasheet PDF文件第6页浏览型号TLC254BCDG4的Datasheet PDF文件第7页 
TLC254, TLC254A, TLC254B, TLC254Y, TLC25L4, TLC25L4A, TLC25L4B  
TLC25L4Y, TLC25M4, TLC25M4A, TLC25M4B, TLC25M4Y  
LinCMOS QUAD OPERATIONAL AMPLIFIERS  
SLOS003G – JUNE 1983 – REVISED MARCH 2001  
A-Suffix Versions Offer 5-mV V  
IO  
IO  
D, N, OR PW PACKAGE  
(TOP VIEW)  
B-Suffix Versions Offer 2-mV V  
Wide Range of Supply Voltages  
1.4 V to 16 V  
1OUT  
1IN–  
1IN+  
4OUT  
4IN–  
4IN+  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
True Single-Supply Operation  
Common-Mode Input Voltage Includes the  
Negative Rail  
V
V
/GND  
DD  
DD–  
2IN+  
2IN–  
3IN+  
2IN–  
3OUT  
Low Noise . . . 25 nV/√Hz Typ at f = 1 kHz  
(High-Bias Version)  
2OUT  
8
description  
symbol (each amplifier)  
The TLC254, TLC254A, TLC254B, TLC25L4,  
TLC254L4A, TLC254L4B, TLC25M4, TLC25M4A  
and TL25M4B are low-cost, low-power quad  
operational amplifiers designed to operate with  
single or dual supplies. These devices utilize the  
Texas Instruments silicon gate LinCMOS  
+
–
IN+  
IN–  
OUT  
process, giving them stable input-offset voltages that are available in selected grades of 2, 5, or 10 mV  
maximum, very high input impedances, and extremely low input offset and bias currents. Because the input  
common-mode range extends to the negative rail and the power consumption is extremely low, this series is  
ideally suited for battery-powered or energy-conserving applications. The series offers operation down to a  
1.4-V supply, is stable at unity gain, and has excellent noise characteristics.  
These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures  
at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised  
in handling these devices as exposure to ESD may result in degradation of the device parametric performance.  
Because of the extremely high input impedance and low input bias and offset currents, applications for these  
devices include many areas that have previously been limited to BIFET and NFET product types. Any circuit  
using high-impedance elements and requiring small offset errors is a good candidate for cost-effective use of  
these devices. Many features associated with bipolar technology are available with LinCMOS operational  
amplifiers without the power penalties of traditional bipolar devices.  
Available options  
PACKAGED DEVICES  
V
max  
CHIP FORM  
(Y)  
IO  
T
A
SMALL OUTLINE  
(D)  
PLASTIC DIP  
(N)  
TSSOP  
(PW)  
AT 25°C  
10 mV  
5 mV  
2 mV  
TLC254CD  
TLC254ACD  
TLC254BCD  
TLC254CN  
TLC254ACN  
TLC254BCN  
TLC254CPW  
TLC254Y  
—
—
—
—
10 mV  
5 mV  
2 mV  
TLC25L4CD  
TLC25L4ACD  
TLC25L2BCD  
TLC25L4CN  
TLC25L4ACN  
TLC25L4BCN  
TLC25L4CPW  
TLC25L4Y  
0°C to 70°C  
—
—
—
—
10 mV  
5 mV  
2 mV  
TLC25M4CD  
TLC25M4ACD  
TLC25M4BCD  
TLC25M4CN  
TLC25M4ACN  
TLC25M4BCN  
TLC25M4CPW  
TLC25M4Y  
—
—
—
—
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC254CDR). Chips  
are tested at 25°C.  
LinCMOS is a trademark of Texas Instruments.  
Copyright 2001, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...26

中文翻译

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TLC254BCDG4 替代型号

型号 品牌 替代类型 描述 数据表
TLC254BCD TI

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