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SLAS043G − MAY 1991 − REVISED NOVEMBER 2003
†
D
D
Power Dissipation . . . 40 mW Max
J
OR DW PACKAGE
(TOP VIEW)
Advanced LinEPIC Single-Poly Process
Provides Close Capacitor Matching for
Better Accuracy
REF+
REF−
ANLG GND
AIN
RD
WR
CLKIN
CS
D9
1
24
23
22
21
20
19
18
17
16
15
14
13
2
D
D
D
D
D
Fast Parallel Processing for DSP and µP
Interface
3
4
Either External or Internal Clock Can Be
Used
ANLG V
5
DD
DGTL GND1
DGTL GND2
D8
6
D7
7
Conversion Time . . . 6 µs
Total Unadjusted Error . . . 1 LSB Max
CMOS Technology
DGTL V
D6
8
DD1
DGTL V
DD2
D5
9
EOC
D0
D1
D4
D3
D2
10
11
12
description
The TLC1550x and TLC1551 are data acquisition
†
Refer to the mechanical data for the JW
package.
analog-to-digital converters (ADCs) using a 10-bit,
switched-capacitor, successive-approximation net-
work. A high-speed, 3-state parallel port directly
interfaces to a digital signal processor (DSP) or
microprocessor (µP) system data bus. D0 through
D9 are the digital output terminals with D0 being
the least significant bit (LSB). Separate power
terminals for the analog and digital portions
minimize noise pickup in the supply leads.
Additionally, the digital power is divided into two
parts to separate the lower current logic from the
higher current bus drivers. An external clock can be
applied to CLKIN to override the internal system
clock if desired.
FK OR FN PACKAGE
(TOP VIEW)
4
3
2 1 28 27 26
5
6
7
8
9
AIN
ANLG V
DGTL GND1
25 CS
24 D9
DD
D8
NC
D7
D6
D5
23
22
21
20
19
NC
DGTL GND2
DGTL V
10
11
DD1
DGTL V
DD2
The TLC1550I and TLC1551I are characterized for
operation from −40°C to 85°C. The TLC1550M is
characterized over the full military range of −55°C
to 125°C.
12 13 14 15 16 17 18
NC − No internal connection
AVAILABLE OPTIONS
PACKAGE
T
A
CERAMIC CHIP CARRIER PLASTIC CHIP CARRIER
CERAMIC DIP
(J)
SOIC
(DW)
(FK)
(FN)
TLC1550IFN
TLC1551IFN
TLC1550IDW
TLC1551IDW
−40°C to 85°C
−55°C to 125°C
—
—
TLC1550MFK
—
TLC1550MJ
—
This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These
circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C,
Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated
voltages to these high-impedance circuits. During storage or handling, the device leads should be shorted together or the device
should be placed in conductive foam. In a circuit, unused inputs should always be connected to an appropriated logic voltage level,
preferably either V
CC
or ground.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Advanced LinEPIC is a trademark of Texas Instruments.
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Copyright 2003, Texas Instruments Incorporated
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