Datasheet > TK18E10K3

TK18E10K3

更新时间： 2024-11-25 14:57:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	264K
描述
EOL announced

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TK18E10K3 数据手册

TK18E10K3

MOSFETs Silicon N-channel MOS (U-MOS)

TK18E10K3

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.)

(2) High forward transfer admittance: |Yfs| = 28 S (typ.)

(3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)

(4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

TO-220

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VDGR

VGSS

100

±20

(RGS = 20 kΩ)

(Note 1)

IDP

(Tc = 25)

Single-pulse avalanche energy

Avalanche current

(Note 2)

(Note 3)

EAS

IAR

Repetitive avalanche energy

Channel temperature

EAR

Tch

7.1



150

-55 to 150

Storage temperature

Tstg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2010-09

2014-01-08

Rev.2.0

12 3 4 5 6 7...9

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