Datasheet > TK19H50C_06

TK19H50C_06

更新时间： 2024-11-20 03:14:47

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	208K
描述
Switching Regulator Applications

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TK19H50C_06 数据手册

TK19H50C

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)

TK19H50C

Switching Regulator Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0. 25Ω (typ.)

DS (ON)

: |Y | = 14 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 500 V)

DSS

: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain−source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

1: GATE

DC (Note 1)

Pulse (Note 1)

Drain current

2: DRAIN (HEAT SINK)

3: SOURCE

Drain power dissipation (Tc = 25°C)

150

Single-pulse avalanche energy

JEDEC

―

968

(Note 2)

JEITA

Avalanche current

TOSHIBA

2-16K1A

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 3.8 g (typ.)

150

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

0.833

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 4.56 mH, R = 25 Ω, I

= 19 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2006-11-06

12 3 4 5 6

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