Datasheet > TJ150F06M3L

TJ150F06M3L

更新时间： 2024-09-18 14:56:51

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TJ150F06M3L 数据手册

TJ150F06M3L

MOSFETs Silicon P-Channel MOS (U-MOS)

TJ150F06M3L

1. Applications

•

Automotive

Relay Drivers

Motor Drivers

2. Features

(1) AEC-Q101 qualified

(2) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = -10 V)

(3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)

(4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (Heatsink)

3: Source

TO-220SM(W)

Start of commercial production

2010-02

2020-06-11

Rev.7.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...10

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