Datasheet > TISP61089QB

TISP61089QB

更新时间： 2024-11-17 01:13:23

品牌	Logo	应用领域
伯恩斯 - BOURNS		/
页数	文件大小	规格书
5页	346K
描述
PROGRAMMABLE OVERVOLTAGE PROTECTOR QUAD FORWARD-CONDUCTING P-GATE THYRISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TISP61089QB 数据手册

TISP61089QB

PROGRAMMABLE OVERVOLTAGE PROTECTOR

QUAD FORWARD-CONDUCTING P-GATE THYRISTOR

TISP61089QB SLIC Overvoltage Protector

Quad Voltage-Programmable Protector

- Wide -20 V to -155 V Programming Range

- Low 5 mA max. Gate Triggering Current

- High 150 mA min. Holding Current

- Rated for ITU-T and YD/T-950 10/700 impulses

- Rated for Telcordia Intra-building impulses

D Package (Top View)

G1,G2

G3,G4

MDRXAN

10/700 Protection Voltage Speciﬁed

Protection Level

Element

Device Symbol

40 A, 5/310

Diode

+12

Crowbar

-64

= -48 V

G1,G2

Description

Bourns^®TISP61089QB is a quad forward-conducting buffered p-gate

overvoltage protector. It is designed to protect monolithic SLICs

(Subscriber Line Interface Circuits) against overvoltages on the tele-

phone line caused by lightning, a.c. power contact and induction. The

TISP61089QB limits voltages that exceed the SLIC supply rail voltage.

The TISP61089QB parameters are speciﬁed to allow equipment compli-

ance with Telcordia GR-1089-CORE Intra-building, ITU-T K.20, K.21 and

K.45 and YD/T-950.

The SLIC line driver section is typically powered from 0 V (ground) and a

negative voltage in the region of -20 V to -155 V. The protector gate is

connected to this negative supply. This references the protection

(clipping) voltage to the negative supply voltage. As the protection

G3,G4

voltage will then track the negative supply voltage the overvoltage stress

on the SLIC is minimized.

SDRXAIA

Positive overvoltages are clipped to ground by diode forward conduction.

Negative overvoltages are initially clipped close to the SLIC negative supply

rail value. If sufﬁcient current is available from the overvoltage, then the protector will crowbar into a low voltage on-state condition. As the

overvoltage subsides, the high holding current of the crowbar helps prevent d.c. latchup.

These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and are virtually

transparent in normal operation. The TISP61089QB buffered gate design reduces the loading on the SLIC supply during overvoltages caused

by power cross and induction. The TISP61089QB is available in an 8-pin plastic small-outline surface mount package.

How to Order

Order As

Marking Code

Standard Quantity

Device

Package

Carrier

Embossed Tape Reeled

TISP61089QBDR-S

1089QB

2500

TISP61089QB 8 Pin Small Outline (D008)

*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.

JULY 2010 - REVISED MAY 2012

Speciﬁcations are subject to change without notice.

Customers should verify actual device performance in their speciﬁc applications.

12 3 4 5

中文翻译

下载PDF

与TISP61089QB相关器件

型号	品牌	获取价格	描述	数据表
TISP61089QB_12	BOURNS	获取价格	PROGRAMMABLE OVERVOLTAGE PROTECTOR QUAD FORWARD-CONDUCTING P-GATE THYRISTOR
TISP61089QBDR-S	BOURNS	获取价格	PROGRAMMABLE OVERVOLTAGE PROTECTOR QUAD FORWARD-CONDUCTING P-GATE THYRISTOR
TISP61089QDR-S	BOURNS	获取价格	Surge Protection Circuit, PDSO8, ROHS COMPLIANT, PLASTIC, SOP-8
TISP61089S	POINN	获取价格	DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP61089SD	POINN	获取价格	DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP61089SD	BOURNS	获取价格	DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP61089SDR	POINN	获取价格	DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP61089SDR	BOURNS	获取价格	DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP61089SDR-S	BOURNS	获取价格	Surge Protection Circuit, PDSO8, ROHS COMPLIANT, PLASTIC, SOP-8
TISP61089SD-S	BOURNS	获取价格	Surge Protection Circuit, PDSO8, ROHS COMPLIANT, PLASTIC, SOP-8

与TISP61089QB相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

15
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

8
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

36
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

31

产品中心

服务支持

精选活动

关于我们

帮助中心

TISP61089QB

TISP61089QB 数据手册

与TISP61089QB相关器件

与TISP61089QB相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TISP61089QB

TISP61089QB 数据手册

与TISP61089QB相关器件

与TISP61089QB相关文章

您还可以找

您在本页遇到什么问题？