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TISP61089QDR-S PDF预览

TISP61089QDR-S

更新时间: 2024-11-16 19:46:43
品牌 Logo 应用领域
伯恩斯 - BOURNS 电信光电二极管电信集成电路
页数 文件大小 规格书
5页 325K
描述
Surge Protection Circuit, PDSO8, ROHS COMPLIANT, PLASTIC, SOP-8

TISP61089QDR-S 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOIC包装说明:SOP,
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.30.00.80
风险等级:5.67JESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
功能数量:1端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
表面贴装:YES电信集成电路类型:SURGE PROTECTION CIRCUIT
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

TISP61089QDR-S 数据手册

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TISP61089Q  
PROGRAMMABLE OVERVOLTAGE PROTECTOR  
QUAD FORWARD-CONDUCTING P-GATE THYRISTOR  
TISP61089Q SLIC Overvoltage Protector  
Quad Voltage-Programmable Protector  
- Wide -20 V to -155 V Programming Range  
- Low 5 mA max. Gate Triggering Current  
- High 150 mA min. Holding Current  
D Package (Top View)  
K2  
A
K1  
G1,G2  
G3,G4  
K3  
1
2
3
4
8
7
6
5
10/700 Protection Voltage Specified  
A
K4  
Protection Level  
40 A, 10/700  
MDRXAN  
Element  
Diode  
+12  
-64  
Device Symbol  
K1  
Crowbar  
V
= -48 V  
GG  
Rated for ITU-T and YD/T-950 10/700 impulses  
Also rated for Telcordia Intra-building impulses  
G1,G2  
Description  
The TISP61089Q is a quad forward-conducting buffered p-gate  
overvoltage protector. It is designed to protect monolithic SLICs  
(Subscriber Line Interface Circuits) against overvoltages on the tele-  
phone line caused by lightning, a.c. power contact and induction. The  
TISP61089Q limits voltages that exceed the SLIC supply rail voltage. The  
TISP61089Q parameters are specified to allow equipment compliance  
with Bellcore GR-1089-CORE, ITU-T K.20, K.21 and K.45 and YD/T-950.  
K2  
A
A
K3  
The SLIC line driver section is typically powered from 0 V (ground) and a  
negative voltage in the region of -20 V to -75 V. The protector gate is  
connected to this negative supply. This references the protection  
(clipping) voltage to the negative supply voltage. As the protection  
voltage will then track the negative supply voltage the overvoltage stress  
on the SLIC is minimized.  
G3,G4  
SDRXAIA  
Positive overvoltages are clipped to ground by diode forward conduction.  
Negative overvoltages are initially clipped close to the SLIC negative supply  
K4  
rail value. If sufficient current is available from the overvoltage, then the protector will crowbar into a low voltage on-state condition. As the  
overvoltage subsides, the high holding current of the crowbar prevents d.c. latchup.  
The TISP61089Q is intended to be used with a series combination of a 25 Ω or higher resistance and a suitable overcurrent protector. Power  
fault compliance requires the series overcurrent element to open-circuit or become high impedance (see Applications Information). For  
equipment compliant to ITU-T recommendations K.20 or K.21 only, the recommended 10 Ω series resistor value is set by the power cross  
requirements.  
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and are virtually  
transparent in normal operation. The TISP61089Q buffered gate design reduces the loading on the SLIC supply during overvoltages caused  
by power cross and induction. The TISP61089Q is available in an 8-pin plastic small-outline surface mount package.  
How to Order  
Order As  
Marking Code  
Standard Quantity  
Device  
Package  
Carrier  
Embossed Tape Reeled  
TISP61089QDR-S  
1089Q  
2500  
TISP61089Q  
8 Pin Small Outline (D008)  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
JULY 2010  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

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