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TISP61089QBDR-S

更新时间： 2024-11-17 01:13:23
品牌 Logo 应用领域
伯恩斯 - BOURNS 电信光电二极管电信集成电路
页数 文件大小 规格书
5页 346K
描述
PROGRAMMABLE OVERVOLTAGE PROTECTOR QUAD FORWARD-CONDUCTING P-GATE THYRISTOR

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TISP61089QBDR-S 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：SOIC包装说明：ROHS COMPLIANT, PLASTIC, SOIC-8
针数：8Reach Compliance Code：not_compliant
HTS代码：8542.39.00.01Factory Lead Time：12 weeks
风险等级：1.78JESD-30 代码：R-PDSO-G8
JESD-609代码：e3长度：4.9 mm
湿度敏感等级：1功能数量：1
端子数量：8封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified座面最大高度：1.75 mm
表面贴装：YES电信集成电路类型：SURGE PROTECTION CIRCUIT
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：3.905 mm

TISP61089QBDR-S 数据手册

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TISP61089QB  
PROGRAMMABLE OVERVOLTAGE PROTECTOR  
QUAD FORWARD-CONDUCTING P-GATE THYRISTOR  
TISP61089QB SLIC Overvoltage Protector  
Quad Voltage-Programmable Protector  
- Wide -20 V to -155 V Programming Range  
- Low 5 mA max. Gate Triggering Current  
- High 150 mA min. Holding Current  
- Rated for ITU-T and YD/T-950 10/700 impulses  
- Rated for Telcordia Intra-building impulses  
D Package (Top View)  
K2  
A
K1  
G1,G2  
G3,G4  
K3  
1
2
3
4
8
7
6
5
A
K4  
MDRXAN  
10/700 Protection Voltage Specified  
Protection Level  
Element  
Device Symbol  
40 A, 5/310  
K1  
Diode  
+12  
Crowbar  
-64  
V
= -48 V  
GG  
G1,G2  
Description  
Bourns® TISP61089QB is a quad forward-conducting buffered p-gate  
overvoltage protector. It is designed to protect monolithic SLICs  
(Subscriber Line Interface Circuits) against overvoltages on the tele-  
phone line caused by lightning, a.c. power contact and induction. The  
TISP61089QB limits voltages that exceed the SLIC supply rail voltage.  
The TISP61089QB parameters are specified to allow equipment compli-  
ance with Telcordia GR-1089-CORE Intra-building, ITU-T K.20, K.21 and  
K.45 and YD/T-950.  
K2  
A
A
K3  
The SLIC line driver section is typically powered from 0 V (ground) and a  
negative voltage in the region of -20 V to -155 V. The protector gate is  
connected to this negative supply. This references the protection  
(clipping) voltage to the negative supply voltage. As the protection  
G3,G4  
voltage will then track the negative supply voltage the overvoltage stress  
on the SLIC is minimized.  
SDRXAIA  
K4  
Positive overvoltages are clipped to ground by diode forward conduction.  
Negative overvoltages are initially clipped close to the SLIC negative supply  
rail value. If sufficient current is available from the overvoltage, then the protector will crowbar into a low voltage on-state condition. As the  
overvoltage subsides, the high holding current of the crowbar helps prevent d.c. latchup.  
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and are virtually  
transparent in normal operation. The TISP61089QB buffered gate design reduces the loading on the SLIC supply during overvoltages caused  
by power cross and induction. The TISP61089QB is available in an 8-pin plastic small-outline surface mount package.  
How to Order  
Order As  
Marking Code  
Standard Quantity  
Device  
Package  
Carrier  
Embossed Tape Reeled  
TISP61089QBDR-S  
1089QB  
2500  
TISP61089QB 8 Pin Small Outline (D008)  
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.  
JULY 2010 - REVISED MAY 2012  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
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