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TISP4080H3BJ PDF预览

TISP4080H3BJ

更新时间: 2024-11-11 20:34:11
品牌 Logo 应用领域
德州仪器 - TI 光电二极管
页数 文件大小 规格书
15页 421K
描述
80V, 60A, SILICON SURGE PROTECTOR, DO-214AA, PLASTIC, SMBJ, 2 PIN

TISP4080H3BJ 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-214AA包装说明:PLASTIC, SMBJ, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.30.00.80
风险等级:5.1Is Samacsys:N
其他特性:UL RECOGNIZED最大转折电压:80 V
配置:SINGLE最大断态直流电压:65 V
最大维持电流:600 mAJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2通态非重复峰值电流:60 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified子类别:Silicon Surge Protectors
表面贴装:YES端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SILICON SURGE PROTECTORBase Number Matches:1

TISP4080H3BJ 数据手册

 浏览型号TISP4080H3BJ的Datasheet PDF文件第2页浏览型号TISP4080H3BJ的Datasheet PDF文件第3页浏览型号TISP4080H3BJ的Datasheet PDF文件第4页浏览型号TISP4080H3BJ的Datasheet PDF文件第5页浏览型号TISP4080H3BJ的Datasheet PDF文件第6页浏览型号TISP4080H3BJ的Datasheet PDF文件第7页 
TISP4070H3BJ THRU TISP4115H3BJ, TISP4125H3BJ THRU TISP4220H3BJ,  
TISP4240H3BJ THRU TISP4400H3BJ  
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS  
NOVEMBER 1997 - REVISED OCTOBER 2000  
TELECOMMUNICATION SYSTEM 100 A 10/1000 OVERVOLTAGE PROTECTORS  
G
G
8 kV 10/700, 200 A 5/310 ITU-T K.20/21 rating  
SMBJ PACKAGE  
(TOP VIEW)  
Ion-Implanted Breakdown Region  
Precise and Stable Voltage  
Low Voltage Overshoot under Surge  
1
2
T(A)  
R(B)  
V
V
(BO)  
DRM  
DEVICE  
V
V
MDXXBG  
‘4070  
‘4080  
‘4095  
‘4115  
‘4125  
‘4145  
‘4165  
‘4180  
‘4200  
‘4220  
‘4240  
‘4250  
‘4265  
‘4290  
‘4300  
‘4350  
‘4395  
‘4400  
58  
65  
75  
90  
70  
80  
95  
device symbol  
T
115  
125  
145  
165  
180  
200  
220  
240  
250  
265  
290  
300  
350  
395  
400  
100  
120  
135  
145  
155  
160  
180  
190  
200  
220  
230  
275  
320  
300  
SD4XAA  
R
Terminals T and R correspond to the  
alternative line designators of A and B  
G
Rated for International Surge Wave Shapes  
I
TSP  
A
WAVE SHAPE  
STANDARD  
2/10 µs  
8/20 µs  
GR-1089-CORE  
IEC 61000-4-5  
FCC Part 68  
500  
300  
250  
200  
160  
100  
10/160 µs  
10/700 µs  
10/560 µs  
10/1000 µs  
G
G
Low Differential Capacitance . . . 67 pF max.  
..................UL Recognized Component  
ITU-T K.20/21  
FCC Part 68  
GR-1089-CORE  
description  
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by  
a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A  
single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication  
equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can  
be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).  
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially  
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to  
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the  
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup  
as the diverted current subsides.  
HOW TO ORDER  
DEVICE  
PACKAGE  
CARRIER  
ORDER AS  
TISP4xxxH3BJ BJ (J-Bend DO-214AA/SMB) Embossed Tape Reeled TISP4xxxH3BJR  
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etcetera.  
Copyright © 2000 Texas Instruments Incorporated  
PRODUCTION DATA information is current as of  
publication date. Products conform to specifications  
per the terms of Texas Instruments standard warranty.  
Production processing does not necessary include  
testing of all parameters.  
Designed and manufactured by Power  
Innovations, A Bourns Company, under  
private label for Texas Instruments.  
1

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