Datasheet > TISP3082F3

TISP3082F3

更新时间： 2024-11-22 22:23:51

品牌	Logo	应用领域
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DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

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TISP3082F3 数据手册

TISP3072F3, TISP3082F3

DUAL SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

TELECOMMUNICATION SYSTEM SECONDARY PROTECTION

●

Ion-Implanted Breakdown Region

Precise and Stable Voltage

D PACKAGE

(TOP VIEW)

Low Voltage Overshoot under Surge

V_DRMV_(BO)

DEVICE

‘3072F3

‘3082F3

MDXXAE

NC - No internal connection

●

Planar Passivated Junctions

Low Off-State Current < 10 µA

P PACKAGE

(TOP VIEW)

Rated for International Surge Wave Shapes

I_TSP

WAVE SHAPE

STANDARD

2/10 µs

8/20 µs

FCC Part 68

ANSI C62.41

FCC Part 68

RLM 88

MDXXAF

10/160 µs

10/560 µs

0.5/700 µs

Specified T terminal ratings require connection of pins 1 and 8.

Specified R terminal ratings require connection of pins 4 and 5.

FTZ R12

SL PACKAGE

(TOP VIEW)

10/700 µs

VDE 0433

CCITT IX K17/K20

REA PE-60

10/1000 µs

●

Surface Mount and Through-Hole Options

PACKAGE

Small-outline

Small-outline taped

and reeled

PART # SUFFIX

MDXXAG

MD23AA

device symbol

Plastic DIP

Single-in-line

●

UL Recognized, E132482

description

These low voltage dual symmetrical transient

voltage suppressor devices are designed to

protect ISDN applications against transients

caused by lightning strikes and a.c. power lines.

Offered in two voltage variants to meet battery

and protection requirements they are guaranteed

to suppress and withstand the listed international

lightning surges in both polarities. Transients are

initially clipped by breakdown clamping until the

voltage rises to the breakover level, which

causes the device to crowbar. The high crowbar

holding current prevents d.c. latchup as the

current subsides.

SD3XAA

Terminals T, R and G correspond to the

alternative line designators of A, B and C

These monolithic protection devices are

fabricated in ion-implanted planar structures to

ensure precise and matched breakover control

and are virtually transparent to the system in

normal operation

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7...16

中文翻译

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与TISP3082F3相关器件

型号	品牌	获取价格	描述	数据表
TISP3082F3D	TI	获取价格	82V, 4A, SILICON SURGE PROTECTOR, SOP-8
TISP3082F3D	BOURNS	获取价格	Silicon Surge Protector, 82V V(BO) Max, 4.3A, SOP-8
TISP3082F3DR	BOURNS	获取价格	LOW-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP3082F3DR	TI	获取价格	82V, 4A, SILICON SURGE PROTECTOR, SOP-8
TISP3082F3DR-S	BOURNS	获取价格	LOW-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP3082F3P	BOURNS	获取价格	Silicon Surge Protector, 82V V(BO) Max, 5.7A, MS-001BA, PLASTIC, D008, MS-001, DIP-8
TISP3082F3P	TI	获取价格	82V, 6A, SILICON SURGE PROTECTOR, PLASTIC, DIP-8
TISP3082F3P-S	BOURNS	获取价格	Silicon Surge Protector, 82V V(BO) Max, 5.7A, MS-001BA, LEAD FREE, PLASTIC, D008, MS-001,
TISP3082F3SL	BOURNS	获取价格	LOW-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP3082F3SL	TI	获取价格	82V, 6A, SILICON SURGE PROTECTOR, SIP-3

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