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TIP31 PDF预览

TIP31

更新时间： 2024-11-04 12:25:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管局域网
页数 文件大小 规格书
6页 87K
描述
Complementary Silicon Plastic Power Transistors

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中文翻译

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TIP31 数据手册

 浏览型号TIP31的Datasheet PDF文件第2页浏览型号TIP31的Datasheet PDF文件第3页浏览型号TIP31的Datasheet PDF文件第4页浏览型号TIP31的Datasheet PDF文件第5页浏览型号TIP31的Datasheet PDF文件第6页 
TIP31, TIP31A, TIP31B, TIP31C,  
(NPN), TIP32, TIP32A, TIP32B,  
TIP32C, (PNP)  
Complementary Silicon  
Plastic Power Transistors  
http://onsemi.com  
Designed for use in general purpose amplifier and switching  
applications.  
3 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
40−60−80−100 VOLTS,  
40 WATTS  
Features  
• Collector−Emitter Saturation Voltage −  
V
= 1.2 Vdc (Max) @ I = 3.0 Adc  
C
CE(sat)  
• Collector−Emitter Sustaining Voltage −  
V
= 40 Vdc (Min) − TIP31, TIP32  
= 60 Vdc (Min) − TIP31A, TIP32A  
= 80 Vdc (Min) − TIP31B, TIP32B  
= 100 Vdc (Min) − TIP31C, TIP32C  
CEO(sus)  
MARKING  
DIAGRAM  
• High Current Gain − Bandwidth Product  
= 3.0 MHz (Min) @ I = 500 mAdc  
f
T
C
• Compact TO−220 AB Package  
• Pb−Free Packages are Available*  
4
MAXIMUM RATINGS  
Rating  
TO−220AB  
CASE 221A  
STYLE 1  
TIP3xxG  
AYWW  
Symbol  
Value  
Unit  
Collector − Emitter Voltage TIP31, TIP32  
TIP31A, TIP32A  
V
40  
60  
80  
Vdc  
CEO  
1
2
3
TIP31B, TIP32B  
100  
TIP31C, TIP32C  
Collector−Base Voltage  
TIP31, TIP32  
TIP31A, TIP32A  
TIP31B, TIP32B  
TIP31C, TIP32C  
V
40  
60  
80  
Vdc  
CB  
TIP3xx = Device Code  
xx  
= 1, 1A, 1B, 1C,  
2, 2A, 2B, 2C,  
= Assembly Location  
= Year  
100  
Emitter−Base Voltage  
Collector Current  
V
5.0  
Vdc  
Adc  
EB  
A
Y
Continuous  
Peak  
I
3.0  
5.0  
C
B
WW  
G
= Work Week  
Pb−Free Package  
Base Current  
I
1.0  
Adc  
Total Power Dissipation  
P
D
@ T = 25_C  
40  
0.32  
C
W
W/_C  
ORDERING INFORMATION  
Derate above 25_C  
See detailed ordering and shipping information in the package  
Total Power Dissipation  
P
dimensions section on page 2 of this data sheet.  
D
@ T = 25_C  
2.0  
0.016  
A
W
Derate above 25_C  
W/_C  
Unclamped Inductive Load Energy (Note 1)  
E
32  
mJ  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to  
+150  
_C  
J
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. I = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, V = 10 V, R = 100 W  
C
CC  
BE  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 10  
TIP31A/D  
123456

中文翻译

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TIP31 替代型号

型号 品牌 替代类型 描述 数据表
TIP31G ONSEMI

完全替代

 Complementary Silicon Plastic Power Transistors
D45H8G ONSEMI

类似代替

 Complementary Silicon Power Transistors

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