SEMICONDUCTOR TECHNICAL DATA
. . . designed for use in general purpose amplifier and switching applications.
Compact TO–220 AB package.
MAXIMUM RATINGS
TIP29B
TIP30B
TIP29C
TIP30C
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Unit
Vdc
Vdc
Vdc
Adc
1 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
V
CEO
80
80
100
100
V
CB
V
EB
5.0
Collector Current — Continuous
Peak
I
C
1.0
3.0
80–100 VOLTS
30 WATTS
Base Current
I
B
0.4
Adc
Total Power Dissipation @ T = 25 C
C
Derate above 25 C
P
D
30
0.24
Watts
W/ C
Total Power Dissipation @ T = 25 C
A
Derate above 25 C
P
D
2.0
0.016
Watts
W/ C
Unclamped Inductive Load Energy
(See Note 3)
E
32
mJ
Operating and Storage Junction
Temperature Range
T , T
–65 to +150
C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
CASE 221A–06
TO–220AB
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
62.5
C/W
C/W
θJA
4.167
θJC
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(I = 30 mAdc, I = 0)
TIP29B, TIP30B
TIP29C, TIP30C
V
80
100
—
—
Vdc
CEO(sus)
C
B
Collector Cutoff Current (V
= 60 Vdc, I = 0)
I
CEO
—
0.3
mAdc
CE
B
Collector Cutoff Current
I
µAdc
CES
(V
CE
(V
CE
= 80 Vdc, V
= 0)
TIP29B, TIP30B
TIP29C, TIP30C
—
—
200
200
EB
= 100 Vdc, V
= 0)
EB
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I = 0)
I
—
1.0
mAdc
—
C
EBO
ON CHARACTERISTICS (1)
DC Current Gain (I = 0.2 Adc, V
= 4.0 Vdc)
= 4.0 Vdc)
h
FE
40
15
—
75
C
CE
CE
DC Current Gain (I = 1.0 Adc, V
C
Collector–Emitter Saturation Voltage (I = 1.0 Adc, I = 125 mAdc)
V
CE(sat)
—
—
0.7
1.3
Vdc
Vdc
C
B
Base–Emitter On Voltage (I = 1.0 Adc, V
C
= 4.0 Vdc)
V
BE(on)
CE
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
f
3.0
20
—
—
MHz
—
T
(I = 200 mAdc, V
C
= 10 Vdc, f
= 1.0 MHz)
test
CE
Small–Signal Current Gain (I = 0.2 Adc, V
= 10 Vdc, f = 1.0 kHz)
h
fe
C
CE
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
2.0%.
(2) f = h • f
.
T
fe test
(3) This rating based on testing with L = 20 mH, R
C
= 100 Ω, V = 10 V, I = 1.8 A, P.R.F = 10 Hz.
CC C
BE
REV 1
3–871
Motorola Bipolar Power Transistor Device Data