Datasheet > TIP30BBG

TIP30BBG

更新时间： 2024-11-06 06:24:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
59页	359K
描述
TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

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SEMICONDUCTOR TECHNICAL DATA

. . . designed for use in general purpose amplifier and switching applications.

Compact TO–220 AB package.

MAXIMUM RATINGS

TIP29B

TIP30B

TIP29C

TIP30C

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

1 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

CEO

100

5.0

Collector Current — Continuous

Peak

1.0

3.0

80–100 VOLTS

30 WATTS

Base Current

0.4

Adc

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.24

Watts

W/ C

Total Power Dissipation @ T = 25 C

Derate above 25 C

2.0

0.016

Watts

W/ C

Unclamped Inductive Load Energy

(See Note 3)

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

CASE 221A–06

TO–220AB

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

62.5

C/W

θJA

4.167

θJC

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(I = 30 mAdc, I = 0)

TIP29B, TIP30B

TIP29C, TIP30C

100

—

Vdc

CEO(sus)

Collector Cutoff Current (V

= 60 Vdc, I = 0)

CEO

—

0.3

mAdc

Collector Cutoff Current

µAdc

CES

= 80 Vdc, V

= 0)

TIP29B, TIP30B

TIP29C, TIP30C

—

200

= 100 Vdc, V

= 0)

Emitter Cutoff Current (V

= 5.0 Vdc, I = 0)

—

1.0

mAdc

—

EBO

ON CHARACTERISTICS (1)

DC Current Gain (I = 0.2 Adc, V

= 4.0 Vdc)

—

DC Current Gain (I = 1.0 Adc, V

Collector–Emitter Saturation Voltage (I = 1.0 Adc, I = 125 mAdc)

CE(sat)

—

0.7

1.3

Vdc

Base–Emitter On Voltage (I = 1.0 Adc, V

= 4.0 Vdc)

BE(on)

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product (2)

3.0

—

MHz

—

(I = 200 mAdc, V

= 10 Vdc, f

= 1.0 MHz)

test

Small–Signal Current Gain (I = 0.2 Adc, V

= 10 Vdc, f = 1.0 kHz)

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

(2) f = h • f

fe test

(3) This rating based on testing with L = 20 mH, R

= 100 Ω, V = 10 V, I = 1.8 A, P.R.F = 10 Hz.

CC C

REV 1

3–871

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...59

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与TIP30BBG相关器件

型号	品牌	获取价格	描述	数据表
TIP30B-BP	MCC	获取价格	1.0 Amp Complementary Silicon Power Transistors
TIP30B-BP-HF	MCC	获取价格	暂无描述
TIP30BBS	ONSEMI	获取价格	TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pur
TIP30B-DR6259	RENESAS	获取价格	Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
TIP30B-DR6260	RENESAS	获取价格	3A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP30B-DR6269	RENESAS	获取价格	3A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP30B-DR6274	RENESAS	获取价格	3A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP30B-DR6280	RENESAS	获取价格	Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
TIP30BDW	ONSEMI	获取价格	1A, 80V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
TIP30BG	ONSEMI	获取价格	Complementary Silicon Plastic Power Transistors

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