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TIP30BBG PDF预览

TIP30BBG

更新时间: 2024-11-06 06:24:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
59页 359K
描述
TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

TIP30BBG 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use in general purpose amplifier and switching applications.  
Compact TO–220 AB package.  
MAXIMUM RATINGS  
TIP29B  
TIP30B  
TIP29C  
TIP30C  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
1 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
V
CEO  
80  
80  
100  
100  
V
CB  
V
EB  
5.0  
Collector Current — Continuous  
Peak  
I
C
1.0  
3.0  
80100 VOLTS  
30 WATTS  
Base Current  
I
B
0.4  
Adc  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
30  
0.24  
Watts  
W/ C  
Total Power Dissipation @ T = 25 C  
A
Derate above 25 C  
P
D
2.0  
0.016  
Watts  
W/ C  
Unclamped Inductive Load Energy  
(See Note 3)  
E
32  
mJ  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
CASE 221A–06  
TO–220AB  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
62.5  
C/W  
C/W  
θJA  
4.167  
θJC  
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (1)  
(I = 30 mAdc, I = 0)  
TIP29B, TIP30B  
TIP29C, TIP30C  
V
80  
100  
Vdc  
CEO(sus)  
C
B
Collector Cutoff Current (V  
= 60 Vdc, I = 0)  
I
CEO  
0.3  
mAdc  
CE  
B
Collector Cutoff Current  
I
µAdc  
CES  
(V  
CE  
(V  
CE  
= 80 Vdc, V  
= 0)  
TIP29B, TIP30B  
TIP29C, TIP30C  
200  
200  
EB  
= 100 Vdc, V  
= 0)  
EB  
Emitter Cutoff Current (V  
BE  
= 5.0 Vdc, I = 0)  
I
1.0  
mAdc  
C
EBO  
ON CHARACTERISTICS (1)  
DC Current Gain (I = 0.2 Adc, V  
= 4.0 Vdc)  
= 4.0 Vdc)  
h
FE  
40  
15  
75  
C
CE  
CE  
DC Current Gain (I = 1.0 Adc, V  
C
Collector–Emitter Saturation Voltage (I = 1.0 Adc, I = 125 mAdc)  
V
CE(sat)  
0.7  
1.3  
Vdc  
Vdc  
C
B
Base–Emitter On Voltage (I = 1.0 Adc, V  
C
= 4.0 Vdc)  
V
BE(on)  
CE  
DYNAMIC CHARACTERISTICS  
Current–Gain — Bandwidth Product (2)  
f
3.0  
20  
MHz  
T
(I = 200 mAdc, V  
C
= 10 Vdc, f  
= 1.0 MHz)  
test  
CE  
Small–Signal Current Gain (I = 0.2 Adc, V  
= 10 Vdc, f = 1.0 kHz)  
h
fe  
C
CE  
(1) Pulse Test: Pulse Width  
300 µs, Duty Cycle  
2.0%.  
(2) f = h f  
.
T
fe test  
(3) This rating based on testing with L = 20 mH, R  
C
= 100 , V = 10 V, I = 1.8 A, P.R.F = 10 Hz.  
CC C  
BE  
REV 1  
3–871  
Motorola Bipolar Power Transistor Device Data  

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