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TIP127 PDF预览

TIP127

更新时间: 2024-11-03 22:42:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管达林顿晶体管
页数 文件大小 规格书
4页 56K
描述
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

TIP127 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:0.57
Samacsys Description:PNP darlington transistor,TIP127 8A最大集电极电流 (IC):5 A
集电极-发射极最大电压:100 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):1000JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
功耗环境最大值:65 W最大功率耗散 (Abs):65 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn) - annealed
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONVCEsat-Max:4 V
Base Number Matches:1

TIP127 数据手册

 浏览型号TIP127的Datasheet PDF文件第2页浏览型号TIP127的Datasheet PDF文件第3页浏览型号TIP127的Datasheet PDF文件第4页 
TIP120/121/122  
TIP125/126/127  
COMPLEMENTARY SILICON POWER  
DARLINGTON TRANSISTORS  
STMicroelectronics PREFERRED  
SALESTYPES  
DESCRIPTION  
The TIP120, TIP121 and TIP122 are silicon  
Epitaxial-Base NPN power transistors in  
monolithic Darlington configuration mounted in  
Jedec TO-220 plastic package. They are intented  
for use in power linear and switching applications.  
The complementary PNP types are TIP125,  
TIP126 and TIP127, respectively.  
3
2
1
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
R1 Typ. = 5 KΩ  
R2 Typ. = 150 Ω  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN  
PNP  
TIP120  
TIP125  
60  
TIP121  
TIP122  
TIP127  
100  
TIP126  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
80  
80  
5
V
V
V
A
A
A
60  
100  
5
ICM  
Collector Peak Current  
Base Current  
8
IB  
0.1  
o
Ptot  
65  
2
W
W
Total Dissipation at Tcase 25 C  
o
Tamb 25 C  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
oC  
oC  
Max. Operating Junction Temperature  
* For PNP types voltage and current values are negative.  
1/4  
March 2000  

TIP127 替代型号

型号 品牌 替代类型 描述 数据表
TIP127G ONSEMI

完全替代

Plastic Medium-Power Complementary Silicon Transistors
TIP125 STMICROELECTRONICS

类似代替

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
TIP112 STMICROELECTRONICS

类似代替

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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TIP12716 MOTOROLA

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TIP12716A MOTOROLA

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TIP127-6200 RENESAS

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8A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP127-6203 RENESAS

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8A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP127-6226 RENESAS

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8A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP127-6255 RENESAS

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Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
TIP127-6258 RENESAS

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8A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB