Datasheet > TIP125_11

TIP125_11

更新时间： 2024-11-04 08:48:43

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描述
Silicon PNP Darlington Power Transistors

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中文翻译

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TIP125_11 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

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TIP125/126/127

Micro Commercial Components

Features

Silicon PNP

Darlington

Power Transistors

•

The complementary NPN types are the TIP121/2/3 respectively

Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

•

Absolute Maximum Ratings @ T

Marking : part number

= 25℃(unless otherwise noted)

Symbol

Parameter

Value

Unit

TO-220

V_CBO

-60

-80

-100

TIP125

TIP126

TIP127

Collector-base voltage (Open emitter)

V_CEO

-60

-80

-100

TIP125

TIP126

TIP127

Collector-emitter voltage (Open base)

V_EBO

I_C

I_CM

I_B

Emitter-base Voltage(Open collector)

Collector Current

-5

-8

-0.12

Collector Current Pulse

Base Current

Total Device Dissipation(Ta=25℃)

Total Device Dissipation(Tc=25℃)

Junction Temperature

℃

P_C

150

-65 to +150

T_J

T_STG

Storage Temperature Range

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

V_CEO(SUS)

TIP125

TIP126

TIP127

-60

-80

-100

Collector-emitter sustaining voltage

( I_C=-100mA; I_B=0)

PIN 1.

PIN 2.

PIN 3.

BASE

COLLECTOR

EMITTER

Collector-emitter Saturation Voltage

( I_C=-3A I_B=-0.012A )

( I_C=-5A I_B=-0.02A )

Base-emitter Voltage

( I_C=-3A ; V_CE=-3V )

Collector cut-off current

( V_CB=-60V, I_E=0)

-2.0

-4.0

DIMENSIONS

V_CE(sat)

INCHES

DIM

MIN

.560

.380

.140

MAX

MIN

14.22

9.65

MAX

15.88

NOTE

.625

.420

.190

V_BE

-2.5

10.67

4.82

I_CBO

3.56

TIP125

TIP126

TIP127

I_CEO

TIP125

TIP126

TIP127

.020

.139

.190

---

.045

.161

.110

.250

.025

0.51

3.53

2.29

---

1.14

4.09

2.79

6.35

0.64

-0.2

-0.5

( V_CB=-80V, I_E=0)

( V_CB=-100V, I_E=0)

Collector cut-off current

(V_CE=-30V; V_EB=0)

(V_CE=-40V; V_EB=0)

(V_CE=-50V; V_EB=0)

Emitter cut-off current

(V_EB=-5V; I_C=0)

.012

0.30

.500

.045

.580

.060

12.70

1.14

14.73

1.52

.190

.210

4.83

5.33

I_EBO

-2.0

300

.100

.080

.045

.230

-----

.135

.115

.055

.270

.050

-----

2.54

2.04

1.14

5.84

-----

3.43

2.92

1.39

6.86

1.27

-----

DC current gain

1000

Hfe

(I_C=-0.5A ; V_CE=-3V)

(I_C=-3.0A ; V_CE=-3V)

Output capacitance

( I_E=0 ; V_CB=-10V,f=0.1MHz )

C_OB

.045

1.15

Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.

www.mccsemi.com

Revision: A

2011/01/01

1 of 2

中文翻译

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与TIP125_11相关器件

型号	品牌	获取价格	描述	数据表
TIP12516	MOTOROLA	获取价格	5A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP12516A	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
TIP125-6200	RENESAS	获取价格	8A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP125-6203	RENESAS	获取价格	8A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP125-6226	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
TIP125-6258	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
TIP125-6261	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
TIP125-6263	RENESAS	获取价格	8A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP125-6264	RENESAS	获取价格	8A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP125-6265	RENESAS	获取价格	8A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB

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