5秒后页面跳转
TIP115 PDF预览

TIP115

更新时间: 2024-11-18 22:42:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
6页 272K
描述
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

TIP115 数据手册

 浏览型号TIP115的Datasheet PDF文件第2页浏览型号TIP115的Datasheet PDF文件第3页浏览型号TIP115的Datasheet PDF文件第4页浏览型号TIP115的Datasheet PDF文件第5页浏览型号TIP115的Datasheet PDF文件第6页 
Order this document  
by TIP110/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for general–purpose amplifier and low–speed switching applications.  
High DC Current Gain —  
= 2500 (Typ) @ I = 1.0 Adc  
Collector–Emitter Sustaining Voltage — @ 30 mAdc  
h
FE  
C
V
V
V
= 60 Vdc (Min) — TIP110, TIP115  
= 80 Vdc (Min) — TIP111, TIP116  
= 100 Vdc (Min) — TIP112, TIP117  
CEO(sus)  
CEO(sus)  
CEO(sus)  
Low Collector–Emitter Saturation Voltage —  
= 2.5 Vdc (Max) @ I = 2.0 Adc  
V
CE(sat)  
C
Monolithic Construction with Built–in Base–Emitter Shunt Resistors  
TO–220AB Compact Package  
*MAXIMUM RATINGS  
*Motorola Preferred Device  
TIP110,  
TIP115  
TIP111,  
TIP116  
TIP112,  
TIP117  
Rating  
Symbol  
Unit  
DARLINGTON  
2 AMPERE  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
6080100 VOLTS  
50 WATTS  
Collector–Emitter Voltage  
V
CEO  
60  
60  
80  
80  
100  
100  
Vdc  
Collector–Base Voltage  
Emitter–Base Voltage  
V
Vdc  
Vdc  
Adc  
CB  
EB  
V
5.0  
Collector Current — Continuous  
Peak  
I
C
2.0  
4.0  
Base Current  
I
B
50  
mAdc  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
50  
0.4  
Watts  
W/ C  
Total Power Dissipation @ T = 25 C  
A
Derate above 25 C  
P
D
2.0  
0.016  
Watts  
W/ C  
Unclamped Inductive Load Energy —  
Figure 13  
E
25  
mJ  
Operating and Storage Junction  
T , T  
J stg  
65 to +150  
C
THERMAL CHARACTERISTICS  
Characteristics  
CASE 221A–06  
TO–220AB  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
2.5  
C/W  
θJC  
θJA  
Thermal Resistance, Junction to Ambient  
R
62.5  
C/W  
T
T
C
A
3.0 60  
2.0 40  
T
C
1.0 20  
T
A
0
0
0
20  
40  
60  
80  
100  
C)  
120  
140  
160  
T, TEMPERATURE (  
°
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995

TIP115 替代型号

型号 品牌 替代类型 描述 数据表
TIP36C STMICROELECTRONICS

功能相似

COMPLEMENTARY SILICON HIGH POWER TRANSISTORS
TIP41C STMICROELECTRONICS

功能相似

COMPLEMENTARY SILICON POWER TRANSISTORS
TIP147T STMICROELECTRONICS

功能相似

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

与TIP115相关器件

型号 品牌 获取价格 描述 数据表
TIP115_11 MCC

获取价格

PNP Epitaxial Silicon Darlington Transistors
TIP115-6200 RENESAS

获取价格

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
TIP115-6255 RENESAS

获取价格

2A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP115-6258 RENESAS

获取价格

2A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP115-6263 RENESAS

获取价格

2A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP115-6265 RENESAS

获取价格

2A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP115A MOTOROLA

获取价格

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
TIP115AF MOTOROLA

获取价格

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
TIP115AK ONSEMI

获取价格

2A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
TIP115-B MCC

获取价格

Transistor