生命周期: | Active | 包装说明: | FLANGE MOUNT, R-CDFM-F2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.05 |
外壳连接: | SOURCE | 配置: | SINGLE |
最小漏源击穿电压: | 15 V | 最大漏极电流 (Abs) (ID): | 26 A |
最大漏极电流 (ID): | 26 A | FET 技术: | JUNCTION |
最高频带: | C BAND | JESD-30 代码: | R-CDFM-F2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | DEPLETION MODE | 最高工作温度: | 175 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 250 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
TIM5964-80SL_08 | TOSHIBA | IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level |
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TIM5964-8A | TOSHIBA | TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-11D1B, 3 PIN, FET RF Power |
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TIM5964-8L | TOSHIBA | TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11D1B, 3 PIN, FET |
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TIM5964-8LC | TOSHIBA | 暂无描述 |
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TIM5964-8SL | TOSHIBA | MICROWAVE POWER GaAs FET |
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TIM5964-8SL-251 | TOSHIBA | TRANSISTOR RF POWER, FET, 2-11D1B, 2 PIN, FET RF Power |
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