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TIM1011-8 PDF预览

TIM1011-8

更新时间： 2024-11-21 13:14:39
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体射频场效应晶体管微波放大器局域网
页数 文件大小 规格书
4页 183K
描述
TRANSISTOR RF POWER, FET, 2-11C1B, 3 PIN, FET RF Power

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中文翻译

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TIM1011-8 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Active包装说明：2-11C1B, 3 PIN
针数：3Reach Compliance Code：unknown
风险等级：5.09Is Samacsys：N
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：15 V最大漏极电流 (ID)：10.4 A
FET 技术：JUNCTION最高频带：KU BAND
JESD-30 代码：R-CDFM-F2元件数量：1
端子数量：2工作模式：DEPLETION MODE
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：240
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

TIM1011-8 数据手册

 浏览型号TIM1011-8的Datasheet PDF文件第2页浏览型号TIM1011-8的Datasheet PDF文件第3页浏览型号TIM1011-8的Datasheet PDF文件第4页 
MICROWAVE POWER GaAs FET  
MICROWAVE SEMICONDUCTOR  
TIM1011-8L  
TECHNICAL DATA  
FEATURES  
„ LOW INTERMODULATION DISTORTION  
IM3=-45 dBc at Pout= 28.0dBm  
Single Carrier Level  
„ HIGH GAIN  
G1dB=6.0 dB at 10.7 GHz to 11.7 GHz  
„ BROAD BAND INTERNALLY MATCHED FET  
„ HERMETICALLY SEALED PACKAGE  
„ HIGH POWER  
P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz  
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )  
°
CHARACTERISTICS  
Output Power at 1dB Gain  
Compression Point  
Power Gain at 1dB Gain  
Compression Point  
Drain Current  
SYMBOL  
CONDITIONS  
UNIT MIN. TYP. MAX.  
P1dB  
dBm 38.5 39.5  
⎯
G1dB  
VDS= 9V  
f= 10.7 to 11.7GHz  
dB  
5.0  
6.0  
⎯
IDS1  
ηadd  
IM3  
A
%
3.4  
22  
4.4  
⎯
⎯
⎯
Power Added Efficiency  
3rd Order Intermodulation  
Distortion  
dBc  
-42  
-45  
⎯
Two-Tone Test  
Po=28. 0dBm  
Drain Current  
IDS2  
A
3.4  
4.4  
80  
⎯
⎯
(Single Carrier Level)  
(VDS X IDS + Pin – P1dB)  
X Rth(c-c)  
C
°
Channel Temperature Rise  
ΔTch  
⎯
Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.)  
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )  
CHARACTERISTICS  
SYMBOL  
CONDITIONS  
VDS= 3V  
UNIT MIN. TYP. MAX.  
Transconductance  
gm  
mS  
2400  
-3.5  
8.0  
⎯
-2.0  
⎯
⎯
-5.0  
⎯
IDS= 4.0 A  
VDS= 3V  
IDS= 120mA  
VDS= 3V  
Pinch-off Voltage  
VGSoff  
IDSS  
V
Saturated Drain Current  
A
VGS= 0V  
Gate-Source Breakdown  
Voltage  
VGSO  
Rth(c-c)  
IGS= -120μA  
V
-5  
⎯
⎯
C/W  
Thermal Resistance  
Channel to Case  
1.6  
2.5  
°
⎯
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is  
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,  
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.  
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA  
before proceeding with design of equipment incorporating this product.  
Rev. May 2007  
1234

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