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TIM1011-8UL PDF预览

TIM1011-8UL

更新时间： 2024-11-25 20:48:55
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网放大器晶体管
页数 文件大小 规格书
2页 83K
描述
TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power

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TIM1011-8UL 技术参数

生命周期：Active包装说明：HERMETIC SEALED, 2-9D1B, 2 PIN
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.09
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：15 V最大漏极电流 (Abs) (ID)：5.7 A
最大漏极电流 (ID)：5.7 AFET 技术：METAL-OXIDE SEMICONDUCTOR
最高频带：X BANDJESD-30 代码：R-CDFM-F2
元件数量：1端子数量：2
工作模式：DEPLETION MODE最高工作温度：175 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
功耗环境最大值：40.5 W子类别：Other Transistors
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：GALLIUM ARSENIDEBase Number Matches：1

TIM1011-8UL 数据手册

 浏览型号TIM1011-8UL的Datasheet PDF文件第2页 
MICROWAVE POWER GaAs FET  
MICROWAVE SEMICONDUCTOR  
TIM1011-8UL  
TECHNICAL DATA  
FEATURES  
„ LOW INTERMODULATION DISTORTION  
IM3=-45 dBc at Pout= 27.0dBm  
Single Carrier Level  
„ HIGH GAIN  
G1dB=9.0 dB at 10.7 GHz to 11.7 GHz  
„ BROAD BAND INTERNALLY MATCHED FET  
„ HERMETICALLY SEALED PACKAGE  
„ HIGH POWER  
P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz  
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )  
°
CHARACTERISTICS  
Output Power at 1dB Gain  
Compression Point  
Power Gain at 1dB Gain  
Compression Point  
Drain Current  
SYMBOL  
CONDITIONS  
UNIT MIN. TYP. MAX.  
P1dB  
dBm 38.5 39.5  
⎯
G1dB  
dB  
8.0  
9.0  
VDS= 10V  
IDSset=2.0A  
f= 10.7 to 11.7GHz  
⎯
IDS1  
ΔG  
ηadd  
IM3  
A
dB  
%
2.0  
⎯
39  
2.5  
±0.8  
⎯
⎯
⎯
⎯
Gain Flatness  
Power Added Efficiency  
3rd Order Intermodulation  
Distortion  
dBc  
-42  
-45  
⎯
Two-Tone Test  
Po=27. 0dBm  
Drain Current  
IDS2  
A
2.0  
2.5  
80  
⎯
⎯
(Single Carrier Level)  
(VDS X IDS + Pin – P1dB)  
X Rth(c-c)  
C
°
Channel Temperature Rise  
ΔTch  
⎯
Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.)  
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )  
CHARACTERISTICS  
SYMBOL  
CONDITIONS  
VDS= 3V  
UNIT MIN. TYP. MAX.  
Transconductance  
gm  
mS  
2000  
-2.0  
4.0  
⎯
-0.5  
⎯
⎯
-4.5  
⎯
IDS= 2.4 A  
VDS= 3V  
IDS= 72mA  
VDS= 3V  
Pinch-off Voltage  
VGSoff  
IDSS  
V
Saturated Drain Current  
A
VGS= 0V  
Gate-Source Breakdown  
Voltage  
VGSO  
Rth(c-c)  
IGS= -72μA  
V
-5  
⎯
⎯
C/W  
Thermal Resistance  
Channel to Case  
3.0  
3.7  
°
⎯
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is  
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,  
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.  
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA  
before proceeding with design of equipment incorporating this product.  
Rev. August 2009  
12

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