Datasheet > TIC206

TIC206

更新时间： 2024-11-26 22:42:15

品牌	Logo	应用领域
POINN		可控硅三端双向交流开关
页数	文件大小	规格书
5页	98K
描述
SILICON TRIACS

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TIC206 数据手册

TIC206 SERIES

SILICON TRIACS

DECEMBER 1971 - REVISED MARCH 1997

●

Sensitive Gate Triacs

4 A RMS

TO-220 PACKAGE

(TOP VIEW)

Glass Passivated Wafer

400 V to 800 V Off-State Voltage

MT1

MT2

Max I of 5 mA (Quadrants 1 - 3)

Pin 2 is in electrical contact with the mounting base.

MDC2ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

TIC206D

TIC206M

TIC206S

TIC206N

400

600

Repetitive peak off-state voltage (see Note 1)

V_DRM

700

800

Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)

Peak on-state surge current full-sine-wave (see Note 3)

Peak on-state surge current half-sine-wave (see Note 4)

Peak gate current

I_T(RMS)

I_TSM

I_GM

±0.2

Peak gate power dissipation at (or below) 85°C case temperature (pulse width £ 200 ms)

Average gate power dissipation at (or below) 85°C case temperature (see Note 5)

Operating case temperature range

P_GM

P_G(AV)

T_C

1.3

°C

0.3

-40 to +110

-40 to +125

230

Storage temperature range

T_stg

Lead temperature 1.6 mm from case for 10 seconds

T_L

NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.

2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at

the rate of 160 mA/°C.

3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.

Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.

4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.

Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.

5. This value applies for a maximum averaging time of 20 ms.

electrical characteristics at 25°C case temperature (unless otherwise noted)

MIN

TYP

MAX

PARAMETER

TEST CONDITIONS

UNIT

Repetitive peak

off-state current

I_DRM

V_D= rated V_DRM

_supply= +12 V†

I_G= 0

T_C= 110°C

±1

R_L= 10 W

t_p(g)> 20 ms

0.5

-1.5

-2

-5

Peak gate trigger

current

V_supply= +12 V†

V_supply= -12 V†

I_GTM

3.6

0.7

-0.7

-0.8

0.8

V_supply= +12 V†

Peak gate trigger

voltage

V_supply= +12 V†

V_supply= -12 V†

-2

V_GTM

† All voltages are with respect to Main Terminal 1.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5

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与TIC206相关器件

型号	品牌	获取价格	描述	数据表
TIC206A	COMSET	获取价格	SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC206A	ASI	获取价格	TRIAC, 100V V(DRM), 3A I(T)RMS,
TIC206A	NJSEMI	获取价格	Thyristor TRIAC 400V 30A 3-Pin(3+Tab) TO-220AB
TIC206A_12	COMSET	获取价格	SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC206B	COMSET	获取价格	SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC206B	ASI	获取价格	TRIAC, 200V V(DRM), 3A I(T)RMS,
TIC206B	NJSEMI	获取价格	Thyristor TRIAC 400V 30A 3-Pin(3+Tab) TO-220AB
TIC206D	ASI	获取价格	TRIAC, 400V V(DRM), 3A I(T)RMS,
TIC206D	COMSET	获取价格	SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC206D	POINN	获取价格	SILICON TRIACS

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