5秒后页面跳转
TGL41-51A PDF预览

TGL41-51A

更新时间: 2024-11-01 23:03:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞬态抑制器二极管IOT局域网
页数 文件大小 规格书
4页 191K
描述
500 Watt Transient Voltage Suppressor

TGL41-51A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.64
Is Samacsys:N最大击穿电压:53.6 V
最小击穿电压:48.5 V击穿电压标称值:51 V
外壳连接:ISOLATED最大钳位电压:70.1 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-213AB
JESD-30 代码:O-PELF-R2JESD-609代码:e0
最大非重复峰值反向功率耗散:500 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:3 W认证状态:Not Qualified
最大重复峰值反向电压:43.6 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:TIN LEAD端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

TGL41-51A 数据手册

 浏览型号TGL41-51A的Datasheet PDF文件第2页浏览型号TGL41-51A的Datasheet PDF文件第3页浏览型号TGL41-51A的Datasheet PDF文件第4页 
TGL41-6.8 thru TGL41-200CA  
500 Watt Transient Voltage Suppressor  
S C O T T S D A L E D I V I S I O N  
APPEARANCE  
DESCRIPTION  
This series of 500 W Transient Voltage Suppressors (TVSs) provides the  
highest level of Peak Pulse Power (PPP) in the industry for the DO-213AB  
size MELF package. These PPP levels offer protection from switching  
transients, induced RF, secondary lightning, as well as ESD or EFT where  
these devices are also compliant to IEC61000-4-2 and IEC61000-4-4. In  
addition to unidirectional TVS configurations, this series also offers  
bidirectional options with C or CA suffix. Its configuration in a MELF  
package prevents lead damage to terminals and also reduces inductive  
parasitics for minimal transient voltage overshoots.  
DO-213AB  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
APPLICATIONS / BENEFITS  
FEATURES  
·
·
Economical series for 500 Watt Surface Mount  
transient voltage suppressor.  
·
·
For Surface Mount Applications  
Protection from switching transients, induced  
RF, secondary lightning, as well as ESD, and  
EFT per IEC 61000-4-2 and IEC 6100-4-4  
Available in Both Unidirectional and Bidirectional  
Construction. Bidirectional has a C or CA suffix.  
·
·
·
6.8 to 200 Volts Available.  
·
·
Very low inductive parasitics with minimal  
Ldi/dt voltage overshoots for fast-rise-time  
transients  
500 Watts Peak Power Dissipation.  
Fast Response Time: Subnanosecond Response  
(Unipolar) or 5.0 ns (Bipolar).  
Robust package for pick-and-place handling  
·
Plastic package has flame retardant epoxy meeting  
UL94V-0  
MAXIMUM RATINGS @ 25oC*  
MECHANICAL AND PACKAGING  
·
Peak Pulse Power Dissipation (PPP) - 500 W (Note  
1 & 5).  
·
·
Molded epoxy package meets UL94V-0  
End-Cap terminals solderable per MIL-STD-750,  
Method 2026 (max 260oC for 10 seconds.  
·
·
Peak Forward Surge Current (IFSM) - 40 A (Note 3)  
·
Polarity is indicated by cathode band. Bidirectional  
devices have no polarity band.  
Peak Pulse Current (IPP) at 10/1000 ms waveform -  
see Table 1 (Note 1)  
·
·
Body marked with P/N without TGL41 prefix.  
Weight: 0.06 grams (approximate)  
·
·
Steady-State Power Dissipation, P(AV) - 3.0W (Note  
2, 4)  
Operating and Storage temperatures, TOP, TSTG  
(-55oC to +150oC)  
·
Tape and Reel packaging per EIA-481-2 with 12  
mm tape with 5000 per 13 inch reel.  
·
Thermal Resistance junction to end cap (R JEC) –  
?
15oC/W  
* Unless otherwise specified.  
NOTES:  
1. Non-repetitive current pulse, per Figure 3 and derated above TA = 25oC per Figure 2.  
2
2. Mounted on 4.0 mm copper pads to each terminal. (See Figure 3)  
3. 8.3 ms single half-sine wave duty cycle = 4 pulses per minute max. Peak forward voltage at 40 A is 3.5 volts (unipolar only)  
4. Derate linearly above 100oC to zero at 150oC for dc steady-state power. Also see Figure 2 for transient derating.  
5. Peak pulse current waveform is 10/1000 ms, with maximum duty cycle of 0.01%. (See Figure 4)  
Copyright ã 2003  
01-29-2003 REV A  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

TGL41-51A 替代型号

型号 品牌 替代类型 描述 数据表
SA43AG ONSEMI

功能相似

500 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors
SA45AG ONSEMI

功能相似

500 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors
TGL41-51A DIOTEC

功能相似

Surface Mount unidirectional and bidirectional Transient Voltage Suppressor Diodes

与TGL41-51A相关器件

型号 品牌 获取价格 描述 数据表
TGL41-51A/46 VISHAY

获取价格

Trans Voltage Suppressor Diode, 43.6V V(RWM), Unidirectional,
TGL41-51A26 VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 43.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
TGL41-51A-26 VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 43.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
TGL41-51A26HE3 VISHAY

获取价格

DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AB, PLASTIC, GL41, 2 PIN, Transient
TGL41-51A46 VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 43.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
TGL41-51A-46 VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 43.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
TGL41-51A46HE3 VISHAY

获取价格

DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AB, PLASTIC, GL41, 2 PIN, Transient
TGL41-51AC MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 500W, 43.6V V(RWM), Bidirectional, 1 Element, Silicon, DO-
TGL41-51AE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 500W, 43.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
TGL41-51A-E3/26 VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 43.6V V(RWM), Unidirectional, 1 Element, Silicon, DO