Datasheet > TGL41-51A26

TGL41-51A26

更新时间： 2024-11-07 08:20:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	35K
描述
Trans Voltage Suppressor Diode, 400W, 43.6V V(RWM), Unidirectional, 1 Element, Silicon, DO-213AB, PLASTIC, GL41, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TGL41-51A26 数据手册

TGL41-6.8 thru TGL41-200A

Vishay Semiconductors

formerly General Semiconductor

Surface Mount TRANSZORB^®

Transient Voltage Suppressors

DO-213AB (GL41)

Breakdown Voltage 6.8 to 200V

Peak Pulse Power 400W

SOLDERABLE ENDS

1st BAND

+ 0

D2 = D1

- 0.008 (0.20)

Mounting Pad Layout

D1=

0.157 (4.00)

MAX

0.105

0.095

(2.67)

(2.41)

0.049 (1.25) MIN

0.118 (3.00) MIN

0.022 (0.56)

0.018 (0.46)

0.022 (0.56)

0.018 (0.46)

0.205 (5.2)

0.185(4.7)

0.256 (6.50)

REF

Dimensions in inches

and (millimeters)

1st band denotes type and positive end (cathode)

Mechanical Data

Features

Case: JEDEC DO-213AB molded plastic body over

• Plastic package has Underwriters Laboratory

passivated junction

Flammability Classificaion 94V-0

Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

High temperature soldering guaranteed:

250°C/10 seconds at terminals

Polarity: Blue bands denotes the cathode which is

positive with respect to the anode under normal TVS

operation

Mounting Position: Any

Weight: 0.0046 oz., 0.166 g

Packaging codes/options:

• For surface mounted applications

• Glass passivated junction

• Excellent clamping capability

• Low incremental surge resistance

• Very fast response time

• 400W peak pulse capability with a 10/1000µs waveform,

repetition rate (duty cycle): 0.01% (200W above 91V)

• For devices with V_(BR)≥10V, I_Dare typically less

than 1.0µA

• High temperature soldering guaranteed: 250°C/10

26/5K per 13" Reel (12mm tape), 60K/box

46/1.5K per 7" Reel (12mm tape), 30K/box

seconds at terminals

• Available in unidirectional only

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

Value

Unit

Peak pulse power dissipation with a

P_PPM

Minimum 400

10/1000µs waveform⁽¹⁾(Fig. 1)

Steady state power dissipation at T_L= 75°C⁽²⁾

P_M(AV)

I_PPM

1.0

Peak pulse current with a 10/1000µs waveform⁽¹⁾(Fig. 3)

See Next Table

Peak forward surge current, 8.3 ms single half sine-wave

unidirectional only⁽³⁾

I_FSM

Maximum instantaneous forward voltage at 25A for

unidirectional only

V_F

3.5

Operating junction and storage temperature range

T_J, T_STG

–55 to +150

°C

Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above T_A= 25°C per Fig. 2. Rating is 200W above 91V.

(2) Mounted on copper pads to each terminal of 0.31 in²(8.0 mm²) per Fig. 5

(3) Measured at 8.3ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum

Document Number 88403

03-May-02

www.vishay.com

12 3 4

中文翻译

下载PDF

与TGL41-51A26相关器件

型号	品牌	获取价格	描述	数据表
TGL41-51A-26	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 43.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
TGL41-51A26HE3	VISHAY	获取价格	DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AB, PLASTIC, GL41, 2 PIN, Transient
TGL41-51A46	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 43.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
TGL41-51A-46	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 43.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
TGL41-51A46HE3	VISHAY	获取价格	DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AB, PLASTIC, GL41, 2 PIN, Transient
TGL41-51AC	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 43.6V V(RWM), Bidirectional, 1 Element, Silicon, DO-
TGL41-51AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 43.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
TGL41-51A-E3/26	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 43.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
TGL41-51A-E3/96	VISHAY	获取价格	DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AB, ROHS COMPLIANT, PLASTIC, GL41,
TGL41-51A-E3/97	VISHAY	获取价格	DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AB, ROHS COMPLIANT, PLASTIC, GL41,

与TGL41-51A26相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

TGL41-51A26

TGL41-51A26 数据手册

与TGL41-51A26相关器件

与TGL41-51A26相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TGL41-51A26

TGL41-51A26 数据手册

与TGL41-51A26相关器件

与TGL41-51A26相关文章

您还可以找

您在本页遇到什么问题？