Datasheet > TGBLN6603-5DL8

TGBLN6603-5DL8

更新时间： 2024-04-09 19:00:18

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	597K
描述
34A, 60V, 40W, N Channel, Dual MOSFETs

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TGBLN6603-5DL8 数据手册

Dual N-Channel Enhancement Mode MOSFET

TGBLN6603-5DL8

Package Outline Dimensions (Unit: mm)

PDFN5×6-8LC

Dimension

Min.

4.824

5.674

0.900

0.350

0.559

0.574

1.250

0.424

1.190

0.154

5.974

4.944

1.595

3.375

Max.

4.976

5.826

1.000

0.450

0.711

0.726

1.290

0.576

1.390

0.354

6.126

5.096

1.795

3.575

M/O

N/P

Mounting Pad Layout (Unit: mm)

PDFN5×6-8LC

Important Notice

Changzhou Galaxy Century Microelectronics (GME) reserves the right to make changes without further

notice to any product information (copyrighted) herein to make corrections, modifications,

improvements, or other changes. GME does not assume any liability arising out of the application or

use of any product described herein; neither does it convey any license under its patent rights, nor the

rights of others.

MTM0736A: September 2022 [2.1]

www.gmesemi.com

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