Datasheet > TGBLN6603-5DL8

TGBLN6603-5DL8

更新时间： 2024-04-09 19:00:18

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	597K
描述
34A, 60V, 40W, N Channel, Dual MOSFETs

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TGBLN6603-5DL8 数据手册

Dual N-Channel Enhancement Mode MOSFET

TGBLN6603-5DL8

Electrical Characteristics (@ T_A= 25°C unless otherwise specified)

Symbol

Parameter

Test Condition

Min. Typ. Max. Unit

Static Characteristics

V_DSS

I_DSS

I_GSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

V_GS= 0V, I_D= 250μA

V_DS= 48V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

μA

±1 00

On Characteristics

R_DS(ON)

Static Drain-Source On-resistance ^*2

V_GS= 10V, I_D= 10A

V_GS= 4.5V, I_D= 10A

V_DS= V_GS, I_D= 250μA

mΩ

V_GS(th)

Gate Threshold Voltage

1.9

2.5

Dynamic Characteristics

C_ISS

C_OSS

C_RSS

Q_G

Input Capacitance

736

173

V_GS= 0V

Output Capacitance

V_DS= 30V

f = 1.0MHz

Reverse Transfer Capacitance

Total Gate-Charge

16.2

3.8

2.2

V_DD= 30V

V_GS= 10V

I_D= 10A

Q_GS

Q_GD

Gate to Source Charge

Gate to Drain (Miller) Charge

Switching Characteristics

t_d(ON)

Turn-on Delay Time

Turn-on Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

V_DD= 30V

V_GS= 10V

R_G=10Ω

I_D= 20A

t_r

t_d(OFF)

t_f

Source-Drain Diode Characteristics

V_SD

I_S

Diode Forward Voltage ^*2

I_SD= 10A, V_GS= 0V, T_J= 25°C

0.9

1.2

Diode Continuous Forward Current ^*1,4

Reverse Recovery Time

trr

V_R=30V, I_F= 10A

di/dt = 100A/μs

Qrr

Reverse Recovery Charge

Notes:

1. The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper

2. The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%

3. The E_ASdata shows Max. rating. The test condition is V_DD= 25V, V_GS= 10V, L = 0.1mH

4. The data is theoretically the same as I_Dand I_DM, in real applications , should be limited by total power dissipation

5. The data is test on minimal footprint

MTM0736A: September 2022 [2.1]

www.gmesemi.com

123 4 5

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