Datasheet > TG0002_15

TG0002_15

更新时间： 2024-02-05 12:04:16

品牌	Logo	应用领域
SSDI		双极性晶体管
页数	文件大小	规格书
2页	32K
描述
FAST POWER IGBT

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中文翻译

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数据手册

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TG0002_15 数据手册

SSG42N60

SERIES

SOLID STATE DEVICES, INC.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

50 AMP

600 VOLTS

FAST

POWER IGBT

DESIGNER'S DATA SHEET

Part Number /Ordering Information

SSG42N60 N _ TX

Screening : _ = Not Screened

APPLICATION NOTES:

• 600V IGBT Technology

TX = TX Level

TXV = TXV Level

•

Positive Temperature Coefficient for Ease of

= Space Level

Paralleling

3/4/

Lead Bend _= Straight

•

High Current Switching for Motor Drives and

Inverters

Low Saturation Voltage at High Currents.

Low Switching Losses.

High Short Circuit Capability

MOS Input, Voltage Controlled.

Ultra Fast Free Wheeling Diodes

Hermetic Sealed Construction.

TX, TXV, and S-Level Screening Available.

UB = Up Bend

DB = Down Bend

•

Package:

= TO-258, Isolated

= TO-259, Isolated

S2 = SMD2

MAXIMUM RATINGS

SYMBOL

VALUE

600

UNITS

Volts

Collector-Emitter Voltage

CEO

Continuous Collector Current

@ T = 25^oC

@ T = 90^oC

Amps

Average Diode Current

Peak Collector Current

@ T = 25^oC

140

300

C(pk)

IFSM

Gate Emitter Voltage

E20

-65 to +200

200

Volts

^oC

Operating and Storage Temperature

T T

J, STG

Total Device Dissipation @ T = 25^oC

Thermal Resistance,

Junction to Case

0.8

0.7

N, P

^oC/W

θJC

TO-258 (N)

TO-259 (P)

SMD2 (S2)

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TG0002A

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