Datasheet > TG0005C

TG0005C

更新时间： 2024-02-25 02:50:07

品牌	Logo	应用领域
SSDI		双极性晶体管
页数	文件大小	规格书
3页	201K
描述
ultrafast IGBT

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数据手册

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TG0005C 数据手册

SSG55N60 series

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

55 AMP /600 Volts

1.65 V saturation

ultrafast IGBT

Part Number/Ordering Information ^1/

SSG55N60 ___ ___

Screening ^2/

│

└

__ = Not Screened

TX = TX Level

TXV = TXV

S = S Level

Package Type

M = TO-254

Z = TO-254Z

N = TO-258

P = TO-259

/3 = TO-3

Features:

Lowest ON-resistance in the industry



Hermetically Sealed, Isolated Package

Low Total Gate Charge

Fast Switching

TX, TXV, S-Level screening available

Maximum Ratings

Symbol

V_CES

Value

600

Units

Collector – Emitter Breakdown Voltage

Gate – Emitter Voltage

V_GE

±20

@ T_C= 25ºC

@ T_C= 100ºC

I_D1

I_D2

Max. Continuous Collector Current

Max. Instantaneous Drain Current (Tj limited)

Clamped Inductive Load current

@ T_C= 25ºC

L= 10 uH

I_D3

I_LM

200

Repetitive Reverse Voltage Avalanche Energy

Total Power Dissipation

Limited by Tj max

@ T_C= 25ºC

E_ARV

P_D

195

Operating & Storage Temperature

T_OP& T_STG

R_0JC

-55 to +150

0.64 (typ 0.35)

ºC

Maximum Thermal Resistance (Junction to Case)

ºC/W

TO-254 (M)

TO-254Z (Z)

TO-258 (N)

TO-259 (P)

TO-3 (/3)

NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all electrical characteristics @25^oC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TG0005C

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