Datasheet > TG0004B

TG0004B

更新时间： 2024-09-26 01:16:35

品牌	Logo	应用领域
SSDI		双极性晶体管
页数	文件大小	规格书
2页	165K
描述
Fast Power IGBT

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中文翻译

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数据手册

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TG0004B 数据手册

SSG60N60 Series

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number/Ordering Information^1/

85 AMP / 600 Volts

Fast Power IGBT

SSG60N60 ___ ___ ___

Screening^2/

__ = Not Screened

TX = TX Level

TXV = TXV

│

└

│

└

S = S Level

Lead Bend^3/

__ = Straight

Features:

 600V IGBT technology

UB = Up Bend

DB = Down Bend

 Positive temperature coefficient for ease of paralleling

 High current switching for motor drives and inverters

 Low saturation voltage at high currents

 Low switching losses

Package

N = TO-258, Isolated

P = TO-259, Isolated

S2 = SMD2

 High short circuit capability

 MOS input, voltage controlled

 Hermetic sealed construction



TX, TXV, S-level screening available

Maximum Ratings

Symbol

V_CEO

Value

Units

Collector – Emitter Voltage

600

Continuous Collector Current

Average Diode Current

@ T_C= 25ºC

@ T_C= 100ºC

I_C

Peak Collector Current

I_C(pk)

V_GE

200

±20

Gate – Emitter Voltage

Operating & Storage Temperature

Total Device Dissipation

T_J& T_STG

P_D

-65 to +200

350

ºC

@ T_C= 25ºC

Thermal Resistance

Junction to Case

N, P

1.0

0.75

R_0JC

ºC/W

TO-258 (N)

TO-259 (P)

SMD2 (S2)

NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Up and down bend configurations available for TO-258 (N) and TO-259 (P) packages only.

4/ Unless otherwise specified, all electrical characteristics @25^oC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TG0004B

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