是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Contact Manufacturer | 包装说明: | DISK BUTTON, O-CXDB-X4 |
针数: | 4 | Reach Compliance Code: | unknown |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.23 |
配置: | SINGLE | 最大直流栅极触发电流: | 200 mA |
JESD-30 代码: | O-CXDB-X4 | 元件数量: | 1 |
端子数量: | 4 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
最大均方根通态电流: | 700 A | 断态重复峰值电压: | 800 V |
重复峰值反向电压: | 800 V | 表面贴装: | YES |
端子形式: | UNSPECIFIED | 端子位置: | UNSPECIFIED |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TF666-08A | ZARLINK |
获取价格 |
Silicon Controlled Rectifier, 700000mA I(T), 800V V(DRM), | |
TF66610A | DYNEX |
获取价格 |
Fast Switching Thyristor | |
TF666-10A | ZARLINK |
获取价格 |
Silicon Controlled Rectifier, 700000mA I(T), 1000V V(DRM), | |
TF666-10A | DYNEX |
获取价格 |
Silicon Controlled Rectifier, 700000mA I(T), 1000V V(DRM), | |
TF666-10A | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,1KV V(DRM),700A I(T),TO-200AC | |
TF666-10Y | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,1KV V(DRM),700A I(T),TO-200AC | |
TF66612A | DYNEX |
获取价格 |
Fast Switching Thyristor | |
TF666-12A | DYNEX |
获取价格 |
Silicon Controlled Rectifier, 700000mA I(T), 1200V V(DRM), | |
TF666-12A | ZARLINK |
获取价格 |
Silicon Controlled Rectifier, 700000mA I(T), 1200V V(DRM), | |
TF666-12A | STMICROELECTRONICS |
获取价格 |
SILICON CONTROLLED RECTIFIER,1.2KV V(DRM),700A I(T),TO-200AC |