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TF440-20D PDF预览

TF440-20D

更新时间: 2024-09-13 19:04:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极
页数 文件大小 规格书
2页 209K
描述
SILICON CONTROLLED RECTIFIER,2KV V(DRM),400A I(T),TO-220

TF440-20D 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.92标称电路换相断开时间:60 µs
关态电压最小值的临界上升速率:200 V/us最大直流栅极触发电流:200 mA
最大直流栅极触发电压:3 VJESD-609代码:e0
最大漏电流:25 mA通态非重复峰值电流:4000 A
最大通态电流:400000 A最高工作温度:125 °C
最低工作温度:-45 °C断态重复峰值电压:2000 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)触发设备类型:SCR
Base Number Matches:1

TF440-20D 数据手册

 浏览型号TF440-20D的Datasheet PDF文件第2页 

与TF440-20D相关器件

型号 品牌 获取价格 描述 数据表
TF444-01Q STMICROELECTRONICS

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SILICON CONTROLLED RECTIFIER,100V V(DRM),440A I(T),TO-200AB
TF444-01Z STMICROELECTRONICS

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SILICON CONTROLLED RECTIFIER,100V V(DRM),440A I(T),TO-200AB
TF444-04X STMICROELECTRONICS

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SILICON CONTROLLED RECTIFIER,400V V(DRM),440A I(T),TO-200AB
TF444-04Y STMICROELECTRONICS

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SILICON CONTROLLED RECTIFIER,400V V(DRM),440A I(T),TO-200AB
TF444-04Z STMICROELECTRONICS

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SILICON CONTROLLED RECTIFIER,400V V(DRM),440A I(T),TO-200AB
TF444-06B STMICROELECTRONICS

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SILICON CONTROLLED RECTIFIER,600V V(DRM),440A I(T),TO-200AB
TF444-08A STMICROELECTRONICS

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SILICON CONTROLLED RECTIFIER,800V V(DRM),440A I(T),TO-200AB
TF444-08Y STMICROELECTRONICS

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SILICON CONTROLLED RECTIFIER,800V V(DRM),440A I(T),TO-200AB
TF447 DYNEX

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Fast Switching Thyristor
TF447-01A STMICROELECTRONICS

获取价格

SILICON CONTROLLED RECTIFIER,100V V(DRM),470A I(T),TO-200AB