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TF246

更新时间： 2024-10-14 03:28:15
品牌 Logo 应用领域
三洋 - SANYO /
页数 文件大小 规格书
4页 54K
描述
N-channel Silicon Junction FET Electret Condenser Microphone Applications

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中文翻译

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TF246 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.84Is Samacsys：N
配置：SINGLE最大漏极电流 (ID)：0.001 A
FET 技术：JUNCTIONJESD-30 代码：R-PDSO-F3
元件数量：1端子数量：3
工作模式：DEPLETION MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：0.03 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

TF246 数据手册

 浏览型号TF246的Datasheet PDF文件第2页浏览型号TF246的Datasheet PDF文件第3页浏览型号TF246的Datasheet PDF文件第4页 
Ordering number : ENA0729  
SANYO Sem iconductors  
DATA S HEET  
N-channel Silicon Junction FET  
TF246  
Electret Condenser Microphone Applications  
Features  
• Ultrasmall package facilitates miniaturization in end products.  
• Especially suited for use in electret condenser microphone for audio equipments and telephones.  
• Excellent voltage characteristics.  
• Excellent transient characteristics.  
• Adoption of FBET process.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Gate-to-Drain Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
GDO  
--20  
10  
Gate Current  
I
G
mA  
mA  
mW  
°C  
Drain Current  
I
1
D
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
30  
D
Tj  
Tstg  
150  
--55 to +150  
°C  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
--20  
max  
Gate-to-Drain Breakdown Voltage  
Cutoff Voltage  
V
I
=--100µA  
V
V
(BR)GDO  
G
V
V
=5V, I =1µA  
--0.2  
--0.6  
--1.0  
GS(off)  
DS  
DS  
D
Zero-Gate Voltage Drain Current  
Making : F  
I
V
=5V, V =0V  
GS  
140*  
350*  
µA  
DSS  
Continued on next page.  
* : The TF246 is classified by I  
Rank  
as follows : (unit : µA)  
DSS  
4
5
I
140 to 240  
210 to 350  
DSS  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
40407GB TI IM TC-00000316  
No. A0729-1/4  
1234

中文翻译

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