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TF250TH

更新时间： 2024-10-14 03:28:15
品牌 Logo 应用领域
三洋 - SANYO /
页数 文件大小 规格书
4页 34K
描述
N-channel Silicon Junction FET Electret Condenser Microphone

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中文翻译

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TF250TH 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.76配置：SINGLE WITH BUILT-IN DIODE AND RESISTOR
最大漏极电流 (ID)：0.001 AFET 技术：JUNCTION
JESD-30 代码：R-PDSO-F3元件数量：1
端子数量：3工作模式：DEPLETION MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

TF250TH 数据手册

 浏览型号TF250TH的Datasheet PDF文件第2页浏览型号TF250TH的Datasheet PDF文件第3页浏览型号TF250TH的Datasheet PDF文件第4页 
Ordering number : ENA0381  
SANYO Sem iconductors  
DATA S HEET  
N-channel Silicon Junction FET  
TF250TH  
Electret Condenser Microphone  
Applications  
Features  
• Ultrasmall package facilitates miniaturization in end products.  
• Especially suited for use in electret condenser microphone for audio equipments and telephones.  
• Excellent voltage characteristics.  
• Excellent transient characteristics.  
• Adoption of FBET process.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Gate-to-Drain Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
GDO  
--20  
10  
Gate Current  
I
G
mA  
mA  
mW  
°C  
Drain Current  
I
1
D
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
100  
150  
D
Tj  
Tstg  
--55 to +150  
°C  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
--20  
max  
Gate-to-Drain Breakdown Voltage  
Cutoff Voltage  
V
I
=--100µA  
V
V
(BR)GDO  
(off)  
G
V
GS  
V
V
V
V
V
=2V, I =1µA  
--0.1  
140*  
0.7  
--0.4  
--1.0  
DS  
DS  
DS  
DS  
DS  
D
Zero-Gate Voltage Drain Current  
Forward Transfer Admittance  
Input Capacitance  
I
=2V, V =0V  
GS  
350*  
µA  
mS  
pF  
pF  
DSS  
yfs  
=2V, V =0V, f=1kHz  
GS  
1.3  
Ciss  
Crss  
=2V, V =0V, f=1MHz  
GS  
2.8  
Reverse Transfer Capacitance  
Marking: C  
=2V, V =0V, f=1MHz  
GS  
0.55  
Continued on next page.  
* : The TF250TH is classified by I  
DSS  
as follows : (unit : µA)  
Rank  
4
5
I
140 to 240  
210 to 350  
DSS  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
82506GB MS IM TC-00000099  
No. A0381-1/4  
1234

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