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TF222

更新时间： 2024-10-13 22:42:19
品牌 Logo 应用领域
三洋 - SANYO /
页数 文件大小 规格书
4页 33K
描述
N-channel Junction FET

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中文翻译

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TF222 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.69配置：SINGLE WITH BUILT-IN DIODE AND RESISTOR
最大漏极电流 (ID)：0.001 AFET 技术：JUNCTION
JESD-30 代码：R-PDSO-F3元件数量：1
端子数量：3工作模式：DEPLETION MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

TF222 数据手册

 浏览型号TF222的Datasheet PDF文件第2页浏览型号TF222的Datasheet PDF文件第3页浏览型号TF222的Datasheet PDF文件第4页 
Ordering number : ENN7281A  
N-channel Junction FET  
TF222  
Electret Condenser Microphone Applications  
Preliminary  
Features  
Package Dimensions  
• Especially suited for use in electret condenser  
microphone.  
unit : mm  
2207A  
• Ultrasmall package permitting TF222 applied  
sets to be made small and slim.  
• Excellent voltage characteristics.  
• Excellent transient characteristics.  
• Adoption of FBET process.  
[TF222]  
Top View  
1.4  
Side View  
0.1  
0.25  
3
1
2
0.45  
0.2  
Bottom View  
3
Side View  
1 : Drain  
2 : Source  
3 : Gate  
Specifications  
2
1
SANYO : SSFP  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Gate-to-Drain Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
GDO  
--20  
10  
V
Gate Current  
I
G
mA  
mA  
mW  
°C  
Drain Current  
I
1
D
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
100  
150  
D
Tj  
Tstg  
--55 to +150  
°C  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
--20  
max  
Gate-to-Drain Breakdown Voltage  
Cutoff Voltage  
V
I
=--100µA  
V
V
(BR)GDO  
G
V
V
V
V
V
V
=2V, I =1µA  
--0.1  
140*  
0.5  
--1.0  
GS(off)  
DS  
DS  
DS  
DS  
DS  
D
Drain Current  
I
=2V, V =0  
GS  
350*  
µA  
mS  
pF  
pF  
DSS  
yfs  
Forward Transfer Admittance  
Input Capacitance  
=2V, V =0, f=1kHz  
GS  
Ciss  
Crss  
=2V, V =0, f=1MHz  
GS  
5.0  
1.1  
Reverse Transfer Capacitance  
=2V, V =0, f=1MHz  
GS  
Continued on next page.  
* : The TF222 is classified by I  
Rank  
as follows : (unit : µA)  
DSS  
B4  
B5  
I
140 to 240  
210 to 350  
DSS  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
90503 TS IM / O3002 TS IM TA-3621 No.7281-1/4  
1234

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