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TF222BB4 PDF预览

TF222BB4

更新时间： 2024-10-14 20:45:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 45K
描述
TRANSISTOR,JFET,N-CHANNEL,140UA I(DSS),EMD3VAR

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TF222BB4 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：compliant风险等级：5.84
FET 技术：JUNCTION最高工作温度：150 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.1 W
子类别：Other Transistors表面贴装：YES
Base Number Matches：1

TF222BB4 数据手册

 浏览型号TF222BB4的Datasheet PDF文件第2页浏览型号TF222BB4的Datasheet PDF文件第3页浏览型号TF222BB4的Datasheet PDF文件第4页 
Ordering number : ENA0171  
N-channel Silicon Junction FET  
TF222B  
Condenser Microphone Applications  
Features  
•
Especially suited for use in condenser microphone for audio equipments and telephones.  
• TF222B is possible to make applied sets smaller and thinner.  
• Excellent voltage characteristic.  
• Excellent transient characteristic.  
• Adoption of FBET process.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Gate-to-Drain Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
GDO  
--20  
10  
Gate Current  
I
G
mA  
mA  
mW  
°C  
Drain Current  
I
1
D
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
100  
150  
D
Tj  
Tstg  
--55 to +150  
°C  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
--20  
max  
Gate-to-Drain Breakdown Voltage  
Cutoff Voltage  
V
I
=--100µA  
V
V
(BR)GDO  
(off)  
G
V
GS  
V
V
V
V
V
=2V, I =1µA  
--0.1  
140*  
0.5  
--1.0  
DS  
DS  
DS  
DS  
DS  
D
Zero-Gate Voltage Drain Current  
Forward Transfer Admittance  
Input Capacitance  
I
=2V, V =0V  
GS  
350*  
µA  
mS  
pF  
pF  
DSS  
yfs  
=2V, V =0V, f=1kHz  
GS  
1.4  
5.0  
1.1  
Ciss  
Crss  
=2V, V =0V, f=1MHz  
GS  
Reverse Transfer Capacitance  
=2V, V =0V, f=1MHz  
GS  
[Ta=25˚C, V =2.0V, R =2.2kΩ, Cin=5pF, See specified Test Circuit.]  
CC  
L
Voltage Gain  
Reduced Voltage Characteristics  
G
V
=10mV, f=1kHz  
--2.0  
--0.6  
dB  
dB  
V
IN  
IN  
∆G  
VV  
V
=10mV, f=1kHz, V =2.0→1.5V  
CC  
--2.0  
Continued on next page.  
* : The TF222B is classified by I  
as follows : (unit : µA)  
DSS  
Rank  
B4  
B5  
I
140 to 240  
210 to 350  
DSS  
Marking : B  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
D2805GB MS IM TB-00001894  
No. A0171-1/4  
1234

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