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TEPT5600 PDF预览

TEPT5600

更新时间: 2024-10-30 05:53:51
品牌 Logo 应用领域
威世 - VISHAY 晶体光电传感器晶体管光电晶体管
页数 文件大小 规格书
5页 120K
描述
Ambient Light Sensor

TEPT5600 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:unknownHTS代码:8541.40.70.80
风险等级:5.55Is Samacsys:N
其他特性:HIGH SENSITIVITYColl-Emtr Bkdn Voltage-Min:6 V
配置:SINGLE最大暗电源:50 nA
红外线范围:NO标称光电流:0.35 mA
安装特点:THROUGH HOLE MOUNT功能数量:1
最大通态电流:0.02 A最高工作温度:85 °C
最低工作温度:-40 °C光电设备类型:PHOTO TRANSISTOR
峰值波长:570 nm最大功率耗散:0.1 W
形状:ROUND尺寸:5 mm
子类别:Photo Transistors表面贴装:NO
Base Number Matches:1

TEPT5600 数据手册

 浏览型号TEPT5600的Datasheet PDF文件第2页浏览型号TEPT5600的Datasheet PDF文件第3页浏览型号TEPT5600的Datasheet PDF文件第4页浏览型号TEPT5600的Datasheet PDF文件第5页 
TEPT5600  
Vishay Semiconductors  
Ambient Light Sensor  
Description  
TEPT5600 is a silicon NPN epitaxial planar photo  
transistor in a standard T-1 3/4" plastic package.  
Peak of responsivity is in the visible spectrum. Infra-  
red spectrum is suppressed.  
Features  
• Responsivity adapted to human eye  
94 8390  
• Wide angle of half sensitivity ϕ = 20°  
• Lead (Pb)-free component  
• Component in accordance with RoHS  
e4  
2002/95/EC and WEEE 2002/96/EC  
Applications  
• Replacement of cadmium sulfide (CdS) photo  
resistors  
• Ambient light sensor  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
VCEO  
Value  
6
Unit  
V
Collector emitter voltage  
Emitter collector voltage  
Collector current  
VECO  
IC  
1.5  
20  
V
mA  
mW  
°C  
Total power dissipation  
Junction temperature  
Tamb 55 °C  
Ptot  
Tj  
100  
100  
Operating temperature range  
Storage temperature range  
Soldering temperature  
Tamb  
Tstg  
Tsd  
- 40 to + 85  
- 40 to + 100  
260  
°C  
°C  
2 mm distance to package, t 3 s  
°C  
Thermal resistance junction/  
ambient  
RthJA  
450  
K/W  
Basic Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
Min  
6
Typ.  
Max  
Unit  
V
Collector emitter breakdown  
voltage  
IC = 0.1 mA  
VCEO  
Collector dark current  
Collector-emitter capacitance  
Photo current  
VCE = 5 V, E = 0  
CE = 0 V, f = 1 MHz, E = 0  
ICEO  
CCEO  
IPCE  
3
50  
nA  
pF  
µA  
V
16  
70  
Ev = 20 lx, CIE illuminant A,  
VCE = 5 V  
25  
140  
Ev = 100 lx, CIE illuminant A,  
VCE = 5 V  
IPCE  
350  
µA  
Angle of half sensitivity  
ϕ
20  
deg  
nm  
Wavelength of peak sensitivity  
λp  
570  
Range of spectral bandwidth  
λ0.1  
360 to 970  
nm  
Document Number 84768  
Rev. 1.3, 28-Nov-06  
www.vishay.com  
1

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