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TCK423G PDF预览

TCK423G

更新时间: 2023-12-20 18:44:44
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
23页 3621K
描述
2.7 to 28 V External MOSFET Driver IC, WCSP6G

TCK423G 数据手册

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TCK42xG Series  
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic  
TCK42xG Series  
Over Voltage Protection MOSFET Gate Driver IC  
Description  
TCK42xG series is Over Voltage Protection Gate Driver IC for  
External N-channel MOSFET. This product support to MOSFET  
operating in wide voltage line from 2.7 V to 28 V with various Over  
Voltage Lock Out lineups. And this features low standby current,  
less than 1 µA, built in charge pump circuit and MOSFET gate-  
source protection circuit. Package is very small and thin WCSP6G  
(1.2 mm x 0.8 mm (typ.), t: 0.35 mm (max)). Thus this is suitable  
for mobile, wearable system and power management circuit such  
as load switch application.  
WCSP6G  
Weight : 0.61 mg ( typ.)  
Applications  
Load switch circuit for mobile, wearable, and IoT equipment  
Features  
Gate driver for N-channel Common Drain MOSFET  
Gate driver for N-channel Single High side MOSFET  
High maximum input voltage: VIN max = 40 V  
Wide input voltage operation: VIN = 2.7 to 28 V  
Gate-Source protection circuit  
Over Voltage Lock Out : VIN_OVLO = 6.31 V, 10.83 V, 14.29 V, 23.26 V and 27.73 V typ  
Under Voltage Lock Out : VIN_UVLO = 2.0 V typ  
Built in Charge pump circuit: Gate source voltage VGS = 5.6 V and 10 V typ  
Low standby current : IQ(OFF) = 0.9 µA max at VIN = 12 V (Except TCK424G, TCK425G)  
Start of commercial production  
2021-11  
© 2021-2022  
Toshiba Electronic Devices & Storage Corporation  
2022-03-10  
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