Datasheet > TCK425G

TCK425G

更新时间： 2024-11-06 14:57:39

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
23页	3621K
描述
2.7 to 28 V External MOSFET Driver IC, WCSP6G

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TCK425G 数据手册

TCK42xG Series

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

TCK42xG Series

Over Voltage Protection MOSFET Gate Driver IC

Description

TCK42xG series is Over Voltage Protection Gate Driver IC for

External N-channel MOSFET. This product support to MOSFET

operating in wide voltage line from 2.7 V to 28 V with various Over

Voltage Lock Out lineups. And this features low standby current,

less than 1 µA, built in charge pump circuit and MOSFET gate-

source protection circuit. Package is very small and thin WCSP6G

(1.2 mm x 0.8 mm (typ.), t: 0.35 mm (max)). Thus this is suitable

for mobile, wearable system and power management circuit such

as load switch application.

WCSP6G

Weight : 0.61 mg ( typ.)

Applications

Load switch circuit for mobile, wearable, and IoT equipment

Features

 Gate driver for N-channel Common Drain MOSFET

 Gate driver for N-channel Single High side MOSFET

 High maximum input voltage: V_{IN max}= 40 V

 Wide input voltage operation: V_IN= 2.7 to 28 V

 Gate-Source protection circuit

 Over Voltage Lock Out : V_{IN_OVLO}= 6.31 V, 10.83 V, 14.29 V, 23.26 V and 27.73 V typ

 Under Voltage Lock Out : V_{IN_UVLO}= 2.0 V typ

 Built in Charge pump circuit: Gate source voltage V_GS= 5.6 V and 10 V typ

 Low standby current : I_Q(OFF)= 0.9 µA max at V_IN= 12 V (Except TCK424G, TCK425G)

Start of commercial production

2021-11

Toshiba Electronic Devices & Storage Corporation

2022-03-10

12 3 4 5 6 7...23

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