Datasheet > TCK112G

TCK112G

更新时间： 2024-12-01 14:57:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
10页	710K
描述
Not Recommended for New Design

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TCK112G 数据手册

TCK111G,TCK112G

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

TCK111G, TCK112G

3A, 8 mΩ Ultra Low On Resistance Load Switch IC

with Reverse Current Blocking and Thermal Shutdown function

The TCK111G and TCK112G are Load Switch ICs for power management

with Reverse Current Blocking and Thermal Shutdown function featuring

ultra low switch on resistance, high output current and wide input voltage

operation from 1.1 to 5.5 V. Switch ON resistance is only 8.3 mΩ (typ.) at V_IN

= 5.0 V, -1.5 A load conditions and output current is available on 3.0 A. And

these feature a slew rate control driver and output auto-discharge function.

This device are available in 0.5 mm pitch ultra small package WCSP6C (1.0

mm x 1.5 mm, t: 0.5 mm (typ.)). Thus they are ideal for portable applications

that require high-density board assembly such as cellular phone.

WCSP6C

Weight: 1.4 mg (typ.)

Feature

 Low ON resistance:

R_ON= 8.3 mΩ (typ.) at V_IN= 5.0 V, -1.5 A

R_ON= 8.4 mΩ (typ.) at V_IN= 3.3 V, -1.5 A

R_ON= 8.4 mΩ (typ.) at V_IN= 1.8 V, -1.5 A

R_ON= 8.5 mΩ (typ.) at V_IN= 1.1 V, -1.5 A

 Wide input voltage operation: V_IN= 1.1 to 5.5 V

 Reverse current blocking

 Inrush current reducing circuit

 Thermal Shutdown function

 Output auto-discharge ( TCK112G )

 Pull down connection between CONTROL and GND

 Ultra small package : WCSP6C (1.0mm x 1.5mm, t: 0.5 mm(typ.))

Notice

This device is sensitive to electrostatic discharge. Please ensure equipment and tools are adequately earthed when handling.

Start of commercial production

2014-04

Toshiba Electronic Devices & Storage Corporation

2022-10-21

12 3 4 5 6 7...10

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