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TC7WH34FKTE85L PDF预览

TC7WH34FKTE85L

更新时间: 2024-11-16 20:36:27
品牌 Logo 应用领域
东芝 - TOSHIBA 输入元件光电二极管逻辑集成电路触发器
页数 文件大小 规格书
7页 193K
描述
IC LV/LV-A/LVX/H SERIES, TRIPLE 1-INPUT NON-INVERT GATE, PDSO8, 0.50 MM PITCH, PLASTIC, SSOP-8, Gate

TC7WH34FKTE85L 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:SOIC包装说明:VSSOP, TSSOP8,.12,20
针数:8Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.51
系列:LV/LV-A/LVX/HJESD-30 代码:R-PDSO-G8
JESD-609代码:e0长度:2.3 mm
负载电容(CL):50 pF逻辑集成电路类型:BUFFER
最大I(ol):0.004 A功能数量:3
输入次数:1端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:VSSOP
封装等效代码:TSSOP8,.12,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH包装方法:TAPE AND REEL
电源:2/5.5 VProp。Delay @ Nom-Sup:12 ns
传播延迟(tpd):12 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:0.9 mm
子类别:Gates最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL宽度:2 mm
Base Number Matches:1

TC7WH34FKTE85L 数据手册

 浏览型号TC7WH34FKTE85L的Datasheet PDF文件第2页浏览型号TC7WH34FKTE85L的Datasheet PDF文件第3页浏览型号TC7WH34FKTE85L的Datasheet PDF文件第4页浏览型号TC7WH34FKTE85L的Datasheet PDF文件第5页浏览型号TC7WH34FKTE85L的Datasheet PDF文件第6页浏览型号TC7WH34FKTE85L的Datasheet PDF文件第7页 
TC7WH34FU/FK  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7WH34FU, TC7WH34FK  
Triple Non-Inverter  
Features  
TC7WH34FU  
High speed operation  
: t = 3.8ns (typ.)  
pd  
at VCC = 5V, C = 15pF  
L
Low power dissipation  
High noise immunity  
Operating voltage range  
: ICC = 2μA (max) at Ta = 25°C  
: V  
= V  
= 28% V CC (min)  
NIH  
NIL  
: VCC = 2 to 5.5V  
Balanced propagation delays : tpLH tpHL  
5.5-V tolerant inputs  
Identical pin assignment and function with TC7W34  
(SM8)  
TC7WH34FK  
Marking  
SM8  
H 34  
US8  
Product Name  
Lot No.  
WH  
34  
(US8)  
Weight  
SSOP8-P-0.65  
SSOP8-P-0.50A  
Absolute Maximum Ratings (Ta = 25°C)  
: 0.02 g (typ.)  
: 0.01 g (typ.)  
Characteristics  
Supply voltage  
Symbol  
Rating  
Unit  
V
0.5 to 7.0  
0.5 to 7.0  
0.5 to VCC+0.5  
20  
V
V
CC  
DC input voltage  
V
IN  
Pin Assignment (top view)  
DC output voltage  
Input diode current  
Output diode current  
DC output current  
V
V
OUT  
I
mA  
IK  
1A  
1
8
V
CC  
1Y  
3A  
2Y  
I
±20  
±25  
±50  
(Note 1) mA  
OK  
3Y  
2
3
4
7
6
5
I
mA  
mA  
OUT  
2A  
DC V /GND current  
CC  
I
CC  
300 (SM8)  
200 (US8)  
GND  
Power dissipation  
P
mW  
D
Storage temperature  
T
65 to 150  
°C  
°C  
stg  
Lead Temperature (10s)  
T
260  
L
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Note 1: V  
< GND, V > V  
OUT CC  
OUT  
Start of commercial production  
1997-07  
1
2014-03-01  

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