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TC7WH32FU_07 PDF预览

TC7WH32FU_07

更新时间: 2024-11-16 04:28:47
品牌 Logo 应用领域
东芝 - TOSHIBA
页数 文件大小 规格书
7页 209K
描述
CMOS Digital Integrated Circuit Silicon Monolithic Dual 2-Input OR Gate

TC7WH32FU_07 数据手册

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TC7WH32FU/FK  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7WH32FU,TC7WH32FK  
Dual 2-Input OR Gate  
The TC7WH32 is an advanced high speed CMOS 2-Input OR  
Gate fabricated with silicon gate CMOS technology. It achieves  
the high speed operation similar to equivalent Bipolar Schottky  
TTL while maintaining the CMOS low power dissipation. The  
internal circuit is composed of 4 stages including buffer output,  
which provide high noise immunity and stable output. An input  
protection circuit ensures that 0 to 7 V can be applied to the  
input pins without regard to the supply voltage. This device can  
be used to interface 5 V to 3 V systems and two supply systems  
such as battery back up. This circuit prevents device destruction  
due to mismatched supply and input voltages.  
TC7WH32FU  
TC7WH32FK  
Features  
High speed: t = 3.8 ns (typ.) at V  
= 5 V  
pd  
CC  
Low power dissipation: I  
= 2 μA (max) at Ta = 25°C  
CC  
High noise immunity: V  
= V  
= 28% V  
(min)  
NIH  
NIL  
CC  
Power down protection is provided on all inputs.  
Balanced propagation delays: t  
t
pHL  
pLH  
Wide operating voltage range: V  
(opr) = 2~5.5 V  
CC  
Weight  
Marking  
SM8  
SSOP8-P-0.65: 0.02 g (typ.)  
SSOP8-P-0.50A: 0.01 g (typ.)  
US8  
Pin Assignment (top view)  
1
2007-11-01  

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