TC7SZ125FE,LJ(CT

更新时间： 2024-11-24 13:14:31

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东芝 - TOSHIBA		总线驱动器总线收发器逻辑集成电路光电二极管
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数据手册

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TC7SZ125FE,LJ(CT 数据手册

TC7SZ125AFE

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SZ125AFE

Bus Buffer with 3-STATE Output

Features

•

High output drive: ±24 mA (min) at

= 3 V

Super high speed operation: t 2.6 ns (typ.)

= 5 V, 50pF

•

Operation voltage range: V

5.5-V tolerant inputs

= 1.8~5.5 V

CC (opr)

Matches the performance of TC74LCX series when operated at

3.3-V V

Weight: 0.003 g (typ.)

Marking

Pin Assignment (top view)

Type name

IN A

GND

R B

OUT Y

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Power supply voltage

Symbol

Rating

Unit

−0.5~6

DC input voltage

DC output voltage

Input diode current

Output diode current

DC output current

−0.5~V

+ 0.5

OUT

−20

°C

±20

±50

OUT

DC V /ground current

±50

Power dissipation

150

Storage temperature

Lead temperature (10s)

−65~150

260

stg

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2007-11-01

12 3 4 5 6

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