Datasheet > TC7SET08F_09

TC7SET08F_09

更新时间： 2024-11-11 11:58:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	191K
描述
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

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中文翻译

获取价格

数据手册

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TC7SET08F_09 数据手册

TC7SET08F/FU

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SET08F, TC7SET08FU

2-INPUT AND GATE

Features

TC7SET08F

•

High speed :

= 4.2ns (typ.) at V

= 5V, C = 15pF

CC L

Low power dissipation :

= 2 μA (max) at Ta = 25°C

Compatible with TTL outputs :

= 0.8V (max)

= 2.0V (min)

•

5.5-V tolerant inputs

Balanced propagation delays : t

≒ t

pHL

pLH

(SMV)

TC7SET08FU

Marking

Product Name

G 2

(USV)

Weight

SSOP5-P-0.95 : 0.016 g (typ.)

SSOP5-P-0.65A : 0.006 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Supply voltage

Symbol

Rating

Unit

Pin Assignment (top view)

−0.5 to 7

DC input voltage

IN B

IN A

GND

DC output voltage

Input diode current

Output diode current

DC output current

−0.5 to V

+ 0.5

OUT

−20

°C

±20 (Note 1)

±25

OUT

OUT Y

DC V /ground current

±50

Power dissipation

200

Storage temperature

Lead temperature (10 s)

−65 to 150

260

stg

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: V_OUT< GND, V_OUT> V_CC

2009-11-25

12 3 4 5 6

中文翻译

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