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TC7SET125FU PDF预览

TC7SET125FU

更新时间: 2024-11-05 04:28:47
品牌 Logo 应用领域
东芝 - TOSHIBA 总线驱动器总线收发器逻辑集成电路光电二极管
页数 文件大小 规格书
6页 177K
描述
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SET125FU 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:SSOP包装说明:SSOP-5
针数:5Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.59
Is Samacsys:N控制类型:ENABLE LOW
系列:AHCT/VHCTJESD-30 代码:R-PDSO-G5
JESD-609代码:e0长度:2 mm
负载电容(CL):50 pF逻辑集成电路类型:BUS DRIVER
最大I(ol):0.008 A位数:1
功能数量:1端口数量:2
端子数量:5最高工作温度:85 °C
最低工作温度:-40 °C输出特性:3-STATE
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP5/6,.08
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
电源:5 VProp。Delay @ Nom-Sup:11.9 ns
传播延迟(tpd):11.9 ns认证状态:Not Qualified
座面最大高度:1.1 mm子类别:Bus Driver/Transceivers
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
宽度:1.25 mmBase Number Matches:1

TC7SET125FU 数据手册

 浏览型号TC7SET125FU的Datasheet PDF文件第2页浏览型号TC7SET125FU的Datasheet PDF文件第3页浏览型号TC7SET125FU的Datasheet PDF文件第4页浏览型号TC7SET125FU的Datasheet PDF文件第5页浏览型号TC7SET125FU的Datasheet PDF文件第6页 
TC7SET125F/FU  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7SET125F,TC7SET125FU  
Bus Buffer  
Features  
TC7SET125F  
High speed ................................. t = 3.7 ns (typ.)  
pd  
at V  
= 5 V  
CC  
Low power dissipation .............. I  
= 2 µA (max)  
at Ta = 25°C  
CC  
Compatible with TTL outputs...VIL = 0.8 V (max.)  
VIH = 2.0 V (min.)  
5.5V tolerant input.  
TC7SET125FU  
Weight  
SSOP5-P-0.95 : 0.016 g (typ.)  
SSOP5-P-0.65A : 0.006 g (typ.)  
Maximum Ratings (Ta = 25°C)  
Marking  
Type name  
Characteristics  
Symbol  
Rating  
Unit  
Supply voltage range  
DC input voltage  
V
0.5~7.0  
0.5~7.0  
V
V
CC  
G B  
V
IN  
DC output voltage  
Input diode current  
Output diode current  
DC output current  
V
0.5~V  
+ 0.5  
V
OUT  
CC  
I
20  
mA  
mA  
mA  
mA  
mW  
°C  
IK  
Pin Assignment (top view)  
I
±20  
±25  
OK  
I
OUT  
G
1
5 V  
CC  
DC V /ground current  
CC  
I
±50  
CC  
Power dissipation  
P
200  
D
IN A 2  
GND 3  
Storage temperature  
Lead temperature (10 s)  
T
65~150  
260  
stg  
T
°C  
L
4 OUT Y  
1
2004-06-04  

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