Datasheet > TC7S86F(TE85R)

TC7S86F(TE85R)

更新时间： 2024-11-19 20:05:39

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东芝 - TOSHIBA		/
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中文翻译

获取价格

数据手册

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TC7S86F(TE85R) 数据手册

TC7S86F/FU

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7S86F, TC7S86FU

EXCLUSIVE OR Gate

TC7S86F

Features

•

High Speed

: t

: I

10ns (typ.) at V

= 5 V

pd =

Low power dissipation

High noise immunity

Output drive capability

= 1 μA (Max) at Ta = 25°C

: V

= V

= 28% V

(Min)

NIH

NIL

: 5 LSTTL Loads

Symmetrical Output Impedance : |I | = I = 2mA (Min)

(SMV)

Balanced propagation delays

: t

≒ t

pLH pHL

TC7S86FU

Wide operating voltage range : V

= 2 to 6 V

Marking

Product name

E 8

(USV)

Weight

SSOP5-P-0.95

SSOP5-P-0.65A

: 0.016 g (Typ.)

: 0.006 g (Typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Supply voltage

Symbol

Rating

Unit

Pin Assignment (top view)

−0.5 to 7.0

DC input voltage

−0.5 to V

+ 0.5

IN B

IN A

GND

DC output voltage

Input diode current

Output diode current

DC output current

−0.5 to V

+ 0.5

OUT

±20

°C

±20

±12.5

±25

OUT

OUT Y

DC V /ground current

Power dissipation

200

Storage temperature

Lead temperature (10 s)

stg

−65 to 150

260

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Start of commercial production

1991-12

2014-03-01

12 3 4 5 6 7

中文翻译

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