Features
Applications
■ Superior circuit protection
■ Overcurrent protection
■ Blocks surges up to rated voltage limit
■ High-speed performance
■ Small SMT package
■ RS-485 interfaces
■ Exposed sense and data lines
■ Factory automation
■ Battery management systems
■ Protection modules and dongles
■ Process control equipment
■ Test and measurement equipment
■ RoHS compliant*
■ AEC-Q101 compliant**
TBU-DB-Q Series - TBU® High-Speed Protectors
General Information
The TBU-DB-Q Series of Bourns® TBU® products are low capacitance dual bidirectional high-speed
protection components, constructed using MOSFET semiconductor technology, and designed to protect
against faults caused by short circuits, overvoltage transients and faults in battery cells, up to rated limits.
Line 1 I/O
Line 2 I/O
1
6
3
4
Line 1 I/O
Line 2 I/O
The TBU® high-speed protector placed in the system circuit will monitor the current with the MOSFET
detection circuit triggering to provide an effective barrier behind which sensitive electronics will not be
exposed to large currents during transient events.
The TBU® device is provided in a surface mount DFN package and meets industry standard requirements
TBU® Device
Absolute Maximum Ratings (@ T = 25 °C Unless Otherwise Noted)
A
Symbol
Parameter
Value
550
Unit
V
Peak impulse voltage withstand with duration less than 10 ms
Peak DC voltage withstand with duration less than 1 hour
Operating temperature range
V
imp
dc
V
450
V
T
T
T
-55 to +125
-65 to +150
+125
°C
°C
°C
op
Storage temperature range
stg
Maximum Ambient Temperature
amax
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)
A
Symbol
Parameter
Min.
100
Typ.
Max.
Unit
Current required for the device to go from operating state to
protected state
I
150
200
mA
trigger
Ω
Ω
R
R
Series resistance of the TBU® device
Package resistance matching of the TBU® device #1 - TBU® device #2
10.5
13.5
16.5
±0.5
device
match
block
Q
t
I
Time taken for the device to go into current limiting
Current through the triggered TBU® device with 50 Vdc circuit voltage
1
μs
mA
0.5
Voltage below which the triggered TBU®
device will transition to normal operating state
V
4.5
7.5
9.5
V
reset
R
R
Junction to package pads - FR4 using JESD51-3 board
Junction to package pads - FR4 using JESD51-7 board
125
50
°C/W
°C/W
th(j-a)
th(j-a)
Environmental Characteristics
Parameter
Value
Moisture Sensitivity Level
1
1B
*
RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
**”Q” part number suffix for automotive and other applications requiring appropriate AEC-Q101 compliance.
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.