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TBU-DB055-100-WH-Q PDF预览

TBU-DB055-100-WH-Q

更新时间: 2024-11-09 20:01:59
品牌 Logo 应用领域
伯恩斯 - BOURNS 电信电信集成电路
页数 文件大小 规格书
7页 404K
描述
Surge Protection Circuit,

TBU-DB055-100-WH-Q 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
Factory Lead Time:12 weeks风险等级:1.76
JESD-609代码:e3湿度敏感等级:1
峰值回流温度(摄氏度):260电信集成电路类型:SURGE PROTECTION CIRCUIT
端子面层:Matte Tin (Sn)处于峰值回流温度下的最长时间:40
Base Number Matches:1

TBU-DB055-100-WH-Q 数据手册

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Features  
Applications  
Superior circuit protection  
Overcurrent protection  
Blocks surges up to rated voltage limit  
High-speed performance  
Small SMT package  
RS-485 interfaces  
Exposed sense and data lines  
Factory automation  
Battery management systems  
Protection modules and dongles  
Process control equipment  
Test and measurement equipment  
RoHS compliant*  
AEC-Q101 compliant**  
TBU-DB-Q Series - TBU® High-Speed Protectors  
General Information  
The TBU-DB-Q Series of Bourns® TBU® products are low capacitance dual bidirectional high-speed  
protection components, constructed using MOSFET semiconductor technology, and designed to protect  
against faults caused by short circuits, overvoltage transients and faults in battery cells, up to rated limits.  
Line 1 I/O  
Line 2 I/O  
1
6
3
4
Line 1 I/O  
Line 2 I/O  
The TBU® high-speed protector placed in the system circuit will monitor the current with the MOSFET  
detection circuit triggering to provide an effective barrier behind which sensitive electronics will not be  
exposed to large currents during transient events.  
The TBU® device is provided in a surface mount DFN package and meets industry standard requirements  
TBU® Device  
Absolute Maximum Ratings (@ T = 25 °C Unless Otherwise Noted)  
A
Symbol  
Parameter  
Value  
550  
Unit  
V
Peak impulse voltage withstand with duration less than 10 ms  
Peak DC voltage withstand with duration less than 1 hour  
Operating temperature range  
V
imp  
dc  
V
450  
V
T
T
T
-55 to +125  
-65 to +150  
+125  
°C  
°C  
°C  
op  
Storage temperature range  
stg  
Maximum Ambient Temperature  
amax  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Symbol  
Parameter  
Min.  
100  
Typ.  
Max.  
Unit  
Current required for the device to go from operating state to  
protected state  
I
150  
200  
mA  
trigger  
Ω
Ω
R
R
Series resistance of the TBU® device  
Package resistance matching of the TBU® device #1 - TBU® device #2  
10.5  
13.5  
16.5  
±0.5  
device  
match  
block  
Q
t
I
Time taken for the device to go into current limiting  
Current through the triggered TBU® device with 50 Vdc circuit voltage  
1
μs  
mA  
0.5  
Voltage below which the triggered TBU®  
device will transition to normal operating state  
V
4.5  
7.5  
9.5  
V
reset  
R
R
Junction to package pads - FR4 using JESD51-3 board  
Junction to package pads - FR4 using JESD51-7 board  
125  
50  
°C/W  
°C/W  
th(j-a)  
th(j-a)  
Environmental Characteristics  
Parameter  
Value  
Moisture Sensitivity Level  
1
1B  
*
RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.  
**”Q” part number suffix for automotive and other applications requiring appropriate AEC-Q101 compliance.  
Specifications are subject to change without notice.  
Users should verify actual device performance in their specific applications.  
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.  

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