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TBR03L080AF PDF预览

TBR03L080AF

更新时间: 2024-10-31 02:51:47
品牌 Logo 应用领域
未来芯 - FUTUREWAFER /
页数 文件大小 规格书
13页 1756K
描述
Trench MOS Barrier Schottky Rectifier

TBR03L080AF 数据手册

 浏览型号TBR03L080AF的Datasheet PDF文件第2页浏览型号TBR03L080AF的Datasheet PDF文件第3页浏览型号TBR03L080AF的Datasheet PDF文件第4页浏览型号TBR03L080AF的Datasheet PDF文件第5页浏览型号TBR03L080AF的Datasheet PDF文件第6页浏览型号TBR03L080AF的Datasheet PDF文件第7页 
TBR03L080A/AF/B/BF  
Trench MOS Barrier Schottky Rectifier  
1. Synopsis  
1-1. General Description  
This TBR03L080 Series are Trench MOS Barrier Schottky Rectifier  
(TBR) Provides Fast Switching Performance in a Compact  
Thermally Efficient Package. Its Low Profile Makes it a Good  
Option For Flat Panel Display and Other Applications With  
Limited Vertical Clearance. The Device Offers Low Leakage  
Over Temperature Making it a Good Match For Applications  
Requiring Low Quiescent Current.  
SMAJ  
1-2. Feature List  
Trench MOS Barrier Schottky Technology  
Low Forward Voltage Drop  
80-Volts Reverse  
SMAF  
High Frequency Operation  
1-3. Applications  
Switch Mode Power Supply  
Power Factor Correction  
Solar Inverter  
Uninterruptible Power Supply  
High Efficiency DC/DC Converters  
Motor Drivers  
SMBJ  
1-4. Benefits  
Essentially No Switching Losses  
Higher Efficiency  
Reduction Of Heat Sink Requirements  
Parallel Devices Without Thermal Runaway  
Higher System Reliability Due To Lower Operating Temperatures  
SMBF  
1-5. Mechanical Characteristics  
Molded JEDEC Package:  
- SMAJ  
Cathode  
Anode  
- SMAF  
- SMBJ  
- SMBF  
Packing: Tape and Reel  
Flammability rating UL 94V-0  
Halogen Free  
JEDEC MSL Classification: Level 1  
Document Number: F22037S  
05-OCT-2021 V 2.1  
www.futurewafer.com.tw  
1/13  
 
 
 
 
 
 

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