Datasheet > TBR05L120C

TBR05L120C

更新时间： 2024-09-16 02:50:43

品牌	Logo	应用领域
未来芯 - FUTUREWAFER		/
页数	文件大小	规格书
18页	2174K
描述
Trench MOS Barrier Schottky Rectifier

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TBR05L120C 数据手册

TBR05L120A/AF/B/BF/C/HT

Trench MOS Barrier Schottky Rectifier

1. Synopsis

1-1. General Description

This TBR05L120 Series are Trench MOS Barrier Schottky Rectifier

(TBR) Provides Fast Switching Performance in a Compact

Thermally Efficient Package. Its Low Profile Makes it a Good

Option For Flat Panel Display and Other Applications With

Limited Vertical Clearance. The Device Offers Low Leakage

Over Temperature Making it a Good Match For Applications

Requiring Low Quiescent Current.

SMAJ

1-2. Feature List

●

Trench MOS Barrier Schottky Technology

Low Forward Voltage Drop

120-Volts Reverse

SMAF

High Frequency Operation

1-3. Applications

SMCJ

●

Switch Mode Power Supply

Power Factor Correction

Solar Inverter

Uninterruptible Power Supply

High Efficiency DC/DC Converters

Motor Drivers

SMBJ

1-4. Benefits

TO277B

●

Essentially No Switching Losses

Higher Efficiency

Reduction Of Heat Sink Requirements

Parallel Devices Without Thermal Runaway

SMBF

Higher System Reliability Due To Lower Operating Temperatures

1-5. Mechanical Characteristics

●

Molded JEDEC Package:

- SMAJ / SMAF

Cathode

Anode

- SMBJ / SMBF

- SMCJ

- TO277B

●

Packing: Tape and Reel

Flammability rating UL 94V-0

Halogen Free

JEDEC MSL Classification: Level 1

Document Number: F22037Z

05-OCT-2021 V 2.1

www.futurewafer.com.tw

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