Datasheet > TBL120N10TB

TBL120N10TB

更新时间： 2024-04-09 19:00:19

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	557K
描述
70A, 100V, 138W, N Channel, Power MOSFETs

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TBL120N10TB 数据手册

N-Channel Enhancement Mode MOSFET

TBL120N10TB

Electrical Characteristics (@ T_C= 25°C unless otherwise specified)

Symbol

Parameter

Test Condition

Min. Typ. Max. Unit

Static Characteristics

V_DSS

I_DSS

I_GSS

Drain-Source Breakdown Voltage

V_GS= 0V, I_D= 250μA

100

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

V_DS= 80V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

μA

±1 00

On Characteristics

V_GS= 10V, I_D= 20A

V_GS= 4.5V, I_D= 10A

V_DS= V_GS, I_D= 250μA

V_DS= V_GS=0V, f=1MHz

2.6

mΩ

R_DS(ON)

Static Drain-Source On-resistance

V_GS(th)

R_G

Gate Threshold Voltage

Gate Resistance

1.2

1.8

5.7

Dynamic Characteristics

C_ISS

C_OSS

C_RSS

Input Capacitance

1641

529

V_GS= 0V

Output Capacitance

V_DS= 40V

f = 1.0MHz

Reverse Transfer Capacitance

Switching Characteristics

t_d(ON)

t_r

t_d(OFF)

t_f

Turn-on Delay Time

Turn-on Rise Time

V_DS= 50V

V_GS= 10V

R_G= 3Ω

Turn-Off Delay Time

Turn-Off Fall Time

I_D= 20A

Q_G

Total Gate-Charge

V_DS= 50V

V_GS= 10V

I_D= 20A

Q_GS

Q_GD

Gate to Source Charge

Gate to Drain (Miller) Charge

Source-Drain Diode Characteristics

V_SD

trr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

I_SD= 20A, V_GS= 0V

0.91

1.2

I_SD= 20A, V_GS= 30V

dI_SD/d_t= 100A/μs

Qrr

Notes:

1、 The data tested by surface mounted on a 35mm * 35mm * 1mm FR4-epoxy P.C.B

2、 The power dissipation P_Dis based on T_J(MAX)= 150°C, using junction-to-case thermal resistance, and is more useful in setting the

upper dissipation limit for cases where additional heatsinking is used

3、 Single pulse width limited by junction temperature T_J(MAX)= 150°C

4、 The maximum current rating is package limited

5、 The E_ASdata shows Max. rating. The test condition is V_DS= 50V, V_GS= 10V, L = 0.5mH

MTM1234A: May 2022 [2.0]

www.gmesemi.com

123 4 5

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