Datasheet > TBL12N03-S8

TBL12N03-S8

更新时间： 2024-04-09 18:59:13

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	695K
描述
12A, 30V, 1.5W, N Channel, Power MOSFETs

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数据手册

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TBL12N03-S8 数据手册

N-Channel Logic Level Enhancement Mode Power MOSFET

TBL12N03-S8

Features



100% EAS Guaranteed.

Green Device Available.

Super Low Gate Charge.

Excellent C_dV/d_tEffect Decline.

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: SOP-8.

Molding compound, UL flammability classification rating 94V-0.

Terminals: Tin plated leads, solderable per MIL-STD-202, Method 208.

SOP-8

Ordering Information

Part Number

Package

Shipping

Marking Code

4000 pcs / Tape & Reel

TBL12N03-S8

SOP-8

12N03-S8

Maximum Ratings (@T_A=25℃ unless otherwise specified)

Parameter

Symbol

Value

Units

Drain-to-Source Voltage

V_DSS

Gate -Source Voltage

V_GSS

±20

Continuous Drain Current^(NOTE1)

Pulsed Drain Current^(NOTE2)

T_C= 25°C

I_D

T_C= 100°C

I_DM

Thermal Characteristics

Parameter

Symbol

P_D

Limits

1.5

Unit

Power Dissipation^(NOTE3)

T_C= 25°C

Junction-to-Ambient^(NOTE1)

Junction-to-Case^(NOTE1)

R_θJA

R_θJC

T_J

℃/W

℃

Operating Junction Temperature Range

Storage Temperature Range

-55 to +150

T_STG

℃

NOTES:

1：The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper.

2：The data tested by pulsed , pulse width≦300us,duty cycle≦2.

3：The power dissipation is limited by 150℃ junction temperature.

MTM0899A: June 2019

www.gmesemi.com

12 3 4 5

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