Datasheet > TBL150P06D

TBL150P06D

更新时间： 2024-04-09 19:00:37

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	691K
描述
78A, 60V, 187W, P Channel, Power MOSFETs

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TBL150P06D 数据手册

P-Channel Enhancement Mode MOSFET

TBL150P06D

Features



High density cell design for ultralow R_DS(ON)

Fully characterized avalanche voltage and current

Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

JESD22-A114-B ESD rating of class 1C per human body model

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TO-252

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBL150P06D

TO-252

80 pcs / Tube & 2500 pcs / Tape & Reel

150P06D

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-60

±20

-78

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*4

I_D

-55

I_DM

-340

120

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJA

R_θJC

T_J

187

°C /W

°C

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

0.8

-55 ~ +175

T_STG

°C

MTM1008A: December 2022 [2.0]

www.gmesemi.com

12 3 4 5

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